Fairchild/ON Semiconductor FPF2C8P2NL07A
- Part Number:
- FPF2C8P2NL07A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854125-FPF2C8P2NL07A
- Description:
- IC LOAD SWITCH 650V 50A
- ECAD Model:
-
- Datasheet:
- FPF2C8P2NL07A
Fairchild/ON Semiconductor FPF2C8P2NL07A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FPF2C8P2NL07A.
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeChassis Mount
- Package / CaseF2 Module
- Weight45g
- Operating Temperature-40°C~150°C TJ
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- HTS Code8542.39.00.01
- Max Power Dissipation135W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- ConfigurationThree Phase
- Power - Max135W
- InputStandard
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current30A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage650V
- Isolation Voltage2.5kV
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A
- IGBT TypeField Stop
- NTC ThermistorYes
- RoHS StatusROHS3 Compliant
FPF2C8P2NL07A Description
FPF2C8P2NL07A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FPF2C8P2NL07A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FPF2C8P2NL07A Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FPF2C8P2NL07A Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
FPF2C8P2NL07A More Descriptions
650V 50A 3L inverter High Power Module - HPM F2 PKG, 34LD, PRESSFIT TERMINAL, 3P-NPC MODULE
Power Integrated Module (PIM), F2, IGBT, 650 V, 30 A
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
Trans IGBT Module N-CH 650V 50A 174000mW 34-Pin HPM Tray
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
IGBT Modules PIM F2 NPC 650V 50A
INSULATED GATE BIPOLAR TRANSISTO
Fairchild's new inverter modules provide low conduction and switching loss as well. And Press-Fit technology provides simple and reliable mounting. These modules are optimized for the applications such as solar inverter and UPS where a high efficiency and robust design is needed.
Power Integrated Module (PIM), F2, IGBT, 650 V, 30 A
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
Trans IGBT Module N-CH 650V 50A 174000mW 34-Pin HPM Tray
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
IGBT Modules PIM F2 NPC 650V 50A
INSULATED GATE BIPOLAR TRANSISTO
Fairchild's new inverter modules provide low conduction and switching loss as well. And Press-Fit technology provides simple and reliable mounting. These modules are optimized for the applications such as solar inverter and UPS where a high efficiency and robust design is needed.
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