Fairchild/ON Semiconductor FJN3301RBU
- Part Number:
- FJN3301RBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585659-FJN3301RBU
- Description:
- TRANS NPN 50V 0.1A TO-92
- ECAD Model:
-
- Datasheet:
- FJN3301RBU
Fairchild/ON Semiconductor FJN3301RBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJN3301RBU.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight178.2mg
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC50V
- Max Power Dissipation300mW
- Current Rating100mA
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)10V
- hFE Min20
- Continuous Collector Current100mA
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FJN3301RBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 500μA, 10mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.
FJN3301RBU Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
FJN3301RBU Applications
There are a lot of ON Semiconductor
FJN3301RBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 500μA, 10mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.
FJN3301RBU Features
the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
FJN3301RBU Applications
There are a lot of ON Semiconductor
FJN3301RBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FJN3301RBU More Descriptions
NPN Epitaxial Silicon Transistor
IC REG LINEAR 5V 500MA TO252-3
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
IC REG LINEAR 5V 500MA TO252-3
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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