FJL6920TU

Fairchild/ON Semiconductor FJL6920TU

Part Number:
FJL6920TU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2845058-FJL6920TU
Description:
TRANS NPN 800V 20A TO-264
ECAD Model:
Datasheet:
FJL6920TU

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Specifications
Fairchild/ON Semiconductor FJL6920TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJL6920TU.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    19 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Number of Pins
    3
  • Weight
    6.756g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    800V
  • Max Power Dissipation
    200W
  • Current Rating
    20A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    800V
  • Max Collector Current
    30A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5.5 @ 11A 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 2.75A, 11A
  • Collector Emitter Breakdown Voltage
    800V
  • Collector Emitter Saturation Voltage
    3V
  • Collector Base Voltage (VCBO)
    1.7kV
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    5
  • Max Junction Temperature (Tj)
    150°C
  • Height
    29mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FJL6920TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 2.75A, 11A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 30A volts.

FJL6920TU Features
the DC current gain for this device is 5.5 @ 11A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2.75A, 11A
the emitter base voltage is kept at 6V
the current rating of this device is 20A


FJL6920TU Applications
There are a lot of ON Semiconductor
FJL6920TU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FJL6920TU More Descriptions
Bipolar Transistors - BJT NPN Si Transistor Tripple Diff Planar
Trans GP BJT NPN 800V 20A 200000mW 3-Pin(3 Tab) TO-264 Tube
Power Bipolar Transistor, 20A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
NPN Triple Diffused Planar Silicon Transistor
FJL6920 Series 800 V 20A High Voltage Color Display Horizontal Deflection Output
TRANSISTOR, NPN, 800V, 20A, TO-264-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 20A; DC Current Gain hFE: 5.5hFE; Transist
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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