Fairchild/ON Semiconductor FJL6920TU
- Part Number:
- FJL6920TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845058-FJL6920TU
- Description:
- TRANS NPN 800V 20A TO-264
- Datasheet:
- FJL6920TU
Fairchild/ON Semiconductor FJL6920TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJL6920TU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time19 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-264-3, TO-264AA
- Number of Pins3
- Weight6.756g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC800V
- Max Power Dissipation200W
- Current Rating20A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800V
- Max Collector Current30A
- DC Current Gain (hFE) (Min) @ Ic, Vce5.5 @ 11A 5V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3V @ 2.75A, 11A
- Collector Emitter Breakdown Voltage800V
- Collector Emitter Saturation Voltage3V
- Collector Base Voltage (VCBO)1.7kV
- Emitter Base Voltage (VEBO)6V
- hFE Min5
- Max Junction Temperature (Tj)150°C
- Height29mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FJL6920TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 2.75A, 11A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 30A volts.
FJL6920TU Features
the DC current gain for this device is 5.5 @ 11A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2.75A, 11A
the emitter base voltage is kept at 6V
the current rating of this device is 20A
FJL6920TU Applications
There are a lot of ON Semiconductor
FJL6920TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 2.75A, 11A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 30A volts.
FJL6920TU Features
the DC current gain for this device is 5.5 @ 11A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2.75A, 11A
the emitter base voltage is kept at 6V
the current rating of this device is 20A
FJL6920TU Applications
There are a lot of ON Semiconductor
FJL6920TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FJL6920TU More Descriptions
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