Fairchild/ON Semiconductor FDY2000PZ

Name: FDY2000PZ
Brand: Fairchild/ON Semiconductor
SKU: 2474715-FDY2000PZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDY2000PZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2474715-FDY2000PZ

Description:: MOSFET 2P-CH 20V 0.35A SOT-563F

ECAD Model:

Datasheet:: FDY2000PZ

Specifications

Fairchild/ON Semiconductor FDY2000PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDY2000PZ.

Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
32mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
625mW
Terminal Form
FLAT
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
630mW
Turn On Delay Time
6 ns
Power - Max
446mW
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 4.5V
Rise Time
13ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
350mA
Threshold Voltage
-1.03V
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.35A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDY2000PZ Description The dual P-channel MOSFET uses Fairchild's advanced power trench process to optimize rdson) @ Vas=-2.5V. FDY2000PZ Features
·-350mA-20VRDsoN=1.2Ω@Vs=-4.5V Rpsin=1.6Ω@Vas=-2.5V ·ESD protection diode(note 3) RoHS Compliant FDY2000PZ Applications
·Li-lon Battery Pack

FDY2000PZ More Descriptions

Transistor MOSFET Array Dual P-CH 20V 350mA 6-Pin SOT-563 T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET -20V, -0.35A, 1.2Ω
Dual P-Channel 20 V 1.2 ohm Surface Mount Specified PowerTrench Mosfet - SC-89-6
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v.
MOSFET, DUAL, P, SMD, SC89; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.03V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SC-89; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-350mA; Package / Case:SC-89; Power Dissipation Pd:625mW; Pulse Current Idm:1A; SMD Marking:A; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

Certification