Fairchild/ON Semiconductor FDW2506P
- Part Number:
- FDW2506P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477891-FDW2506P
- Description:
- MOSFET 2P-CH 20V 5.3A 8-TSSO
- Datasheet:
- FDW2506P
Fairchild/ON Semiconductor FDW2506P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDW2506P.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Supplier Device Package8-TSSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-20V
- Max Power Dissipation1W
- Current Rating-5.3A
- Number of Elements2
- Power Dissipation1W
- Turn On Delay Time13 ns
- Power - Max600mW
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs22mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1015pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.3A
- Gate Charge (Qg) (Max) @ Vgs34nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)5.3A
- Threshold Voltage800mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance1.015nF
- FET FeatureLogic Level Gate
- Drain to Source Resistance22mOhm
- Rds On Max22 mΩ
- Height1mm
- Length3mm
- Width4.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDW2506P Description
Fairchild Semiconductor's cutting-edge PowerTrench technology is used to create this P-Channel 2.5V specified MOSFET, which has a tough gate design. A wide range of gate drive voltages (2.5V¨C12V) have been used in its optimization for power management applications.
FDW2506P Features
? For battery applications, an expanded VGSS range (12V)
? Small gate fee
? Highly effective trench technology for incredibly low RDS (ON)
? The TSSOP-8 low-profile package
FDW2506P Applications
Switch for loading
Driven by a motor
converting DC to DC
Managing power
Fairchild Semiconductor's cutting-edge PowerTrench technology is used to create this P-Channel 2.5V specified MOSFET, which has a tough gate design. A wide range of gate drive voltages (2.5V¨C12V) have been used in its optimization for power management applications.
FDW2506P Features
? For battery applications, an expanded VGSS range (12V)
? Small gate fee
? Highly effective trench technology for incredibly low RDS (ON)
? The TSSOP-8 low-profile package
FDW2506P Applications
Switch for loading
Driven by a motor
converting DC to DC
Managing power
FDW2506P More Descriptions
Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin TSSOP T/R - Bulk
French Electronic Distributor since 1988
MOSFET, DUAL, P, SMD, TSSOP-8; Transistor Type:PowerTrench; Transistor Polarity:PP; Voltage, Vds Typ:-20V; Current, Id Cont:5.3A; Resistance, Rds On:0.022ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:0.8V; Case Style:TSSOP; Termination Type:SMD; Current, Idm Pulse:30A; No. of Pins:8; Power, Pd:1W; SMD Marking:2506P; Typ Capacitance Ciss:1015pF; Voltage, Vds Max:20V
French Electronic Distributor since 1988
MOSFET, DUAL, P, SMD, TSSOP-8; Transistor Type:PowerTrench; Transistor Polarity:PP; Voltage, Vds Typ:-20V; Current, Id Cont:5.3A; Resistance, Rds On:0.022ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:0.8V; Case Style:TSSOP; Termination Type:SMD; Current, Idm Pulse:30A; No. of Pins:8; Power, Pd:1W; SMD Marking:2506P; Typ Capacitance Ciss:1015pF; Voltage, Vds Max:20V
The three parts on the right have similar specifications to FDW2506P.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceFET FeatureDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRoHS StatusLead FreeView Compare
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FDW2506PSurface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®2000Obsolete1 (Unlimited)150°C-55°C-20V1W-5.3A21W13 ns600mW2 P-Channel (Dual)22mOhm @ 5.3A, 4.5V1.5V @ 250μA1015pF @ 10V5.3A34nC @ 4.5V20V75 ns5.3A800mV12V-20V1.015nFLogic Level Gate22mOhm22 mΩ1mm3mm4.4mmNo SVHCRoHS CompliantLead Free-
-
Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)150°C-55°C20V600mW5.5A21W-600mWN and P-Channel21mOhm @ 5.5A, 4.5V1.5V @ 250μA1082pF @ 10V5.5A 3.8A17nC @ 4.5V20V34 ns5.5A800mV12V20V1.082nFLogic Level Gate21mOhm21 mΩ1mm3mm4.4mmNo SVHCRoHS CompliantLead Free
-
-Surface Mount8-TSSOP (0.173, 4.40mm Width)-8-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®2002Obsolete1 (Unlimited)--------600mW2 P-Channel (Dual)43mOhm @ 3.8A, 4.5V1.5V @ 250μA1030pF @ 10V3.8A16nC @ 4.5V20V------Logic Level Gate--------
-
--TSSOP-8---Tape & Reel (TR)---------------------------------RoHS Compliant-
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