Fairchild/ON Semiconductor FDW2501N
- Part Number:
- FDW2501N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477786-FDW2501N
- Description:
- MOSFET 2N-CH 20V 6A 8-TSSOP
- Datasheet:
- FDW2501N
Fairchild/ON Semiconductor FDW2501N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDW2501N.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Supplier Device Package8-TSSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC20V
- Max Power Dissipation600mW
- Current Rating6A
- Number of Elements2
- Power Dissipation1W
- Power - Max600mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs18mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1290pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A
- Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)6A
- Threshold Voltage900mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Input Capacitance1.29nF
- FET FeatureLogic Level Gate
- Drain to Source Resistance18mOhm
- Rds On Max18 mΩ
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDW2501N Description
A tough gate variant of Fairchild Semiconductor's cutting-edge PowerTrench technology produces an N-Channel 2.5V specified MOSFET. A wide range of gate drive voltages (2.5V¨C12V) have been used in its optimization for power management applications.
FDW2501N Features
? VGSS range extension (12V) for battery applications
? Diode for ESD protection (note 3)
? Ultra-low RDS with high performance trench technology (ON)
? TSSOP-8 packaging with a low profile
FDW2501N Applications
? loading switch
? Power supply
? Conversion of DC/DC
? Power administration
A tough gate variant of Fairchild Semiconductor's cutting-edge PowerTrench technology produces an N-Channel 2.5V specified MOSFET. A wide range of gate drive voltages (2.5V¨C12V) have been used in its optimization for power management applications.
FDW2501N Features
? VGSS range extension (12V) for battery applications
? Diode for ESD protection (note 3)
? Ultra-low RDS with high performance trench technology (ON)
? TSSOP-8 packaging with a low profile
FDW2501N Applications
? loading switch
? Power supply
? Conversion of DC/DC
? Power administration
FDW2501N More Descriptions
Trans MOSFET N-CH 20V 6A 8-Pin TSSOP W T/R
French Electronic Distributor since 1988
MOSFET, DUAL, N, SMD, TSSOP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Transistor Case Style:TSSOP; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Capacitance Ciss Typ:1290pF; Current Id Max:5.5A; Package / Case:TSSOP; Power Dissipation Pd:1W; Pulse Current Idm:30A; SMD Marking:2501N; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
French Electronic Distributor since 1988
MOSFET, DUAL, N, SMD, TSSOP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Transistor Case Style:TSSOP; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Capacitance Ciss Typ:1290pF; Current Id Max:5.5A; Package / Case:TSSOP; Power Dissipation Pd:1W; Pulse Current Idm:30A; SMD Marking:2501N; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
The three parts on the right have similar specifications to FDW2501N.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsPower DissipationPower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceFET FeatureDrain to Source ResistanceRds On MaxREACH SVHCRoHS StatusLead FreePublishedTurn On Delay TimeHeightLengthWidthView Compare
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FDW2501NSurface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)150°C-55°C20V600mW6A21W600mW2 N-Channel (Dual)18mOhm @ 6A, 4.5V1.5V @ 250μA1290pF @ 10V6A17nC @ 4.5V20V26 ns6A900mV12V20V1.29nFLogic Level Gate18mOhm18 mΩNo SVHCRoHS CompliantLead Free------
-
-Surface Mount8-TSSOP (0.173, 4.40mm Width)-8-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)-------600mW2 P-Channel (Dual)43mOhm @ 3.8A, 4.5V1.5V @ 250μA1030pF @ 10V3.8A16nC @ 4.5V20V------Logic Level Gate-----2002----
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Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)150°C-55°C-20V1W-5.3A21W600mW2 P-Channel (Dual)22mOhm @ 5.3A, 4.5V1.5V @ 250μA1015pF @ 10V5.3A34nC @ 4.5V20V75 ns5.3A800mV12V-20V1.015nFLogic Level Gate22mOhm22 mΩNo SVHCRoHS CompliantLead Free200013 ns1mm3mm4.4mm
-
-Surface Mount8-TSSOP (0.173, 4.40mm Width)-8-TSSOP-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)-------1.1W2 N-Channel (Dual)24mOhm @ 6.4A, 4.5V1.5V @ 250μA870pF @ 10V6.4A12nC @ 4.5V20V------Logic Level Gate-----2006----
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