Fairchild/ON Semiconductor FDS6990AS
- Part Number:
- FDS6990AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847590-FDS6990AS
- Description:
- MOSFET 2N-CH 30V 7.5A 8SOIC
- Datasheet:
- FDS6990AS
Fairchild/ON Semiconductor FDS6990AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6990AS.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance22mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation900mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time8 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.5A
- Gate Charge (Qg) (Max) @ Vgs14nC @ 5V
- Rise Time8ns
- Fall Time (Typ)8 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)7.5mA
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.5A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs1.7 V
- Height1.75mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6990AS Description
The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes. FDS6990AS Features 7.5A, 30V RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V Includes SyncFET Schottky body diode Low gate charge (10nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability
FDS6990AS Applications
This product is general usage and suitable for many different applications. DC/DC Converters Motor Drives
The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes. FDS6990AS Features 7.5A, 30V RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V Includes SyncFET Schottky body diode Low gate charge (10nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability
FDS6990AS Applications
This product is general usage and suitable for many different applications. DC/DC Converters Motor Drives
FDS6990AS More Descriptions
Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R
Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ
N CHANNEL MOSFET, 30V, 7.5mA; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Current Id Max:7.5mA; Operating Temperature Range:-55°C to 150°C; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ
N CHANNEL MOSFET, 30V, 7.5mA; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Current Id Max:7.5mA; Operating Temperature Range:-55°C to 150°C; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
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