FDS6990AS

Fairchild/ON Semiconductor FDS6990AS

Part Number:
FDS6990AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847590-FDS6990AS
Description:
MOSFET 2N-CH 30V 7.5A 8SOIC
ECAD Model:
Datasheet:
FDS6990AS

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Specifications
Fairchild/ON Semiconductor FDS6990AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6990AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    22mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    900mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    8 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 5V
  • Rise Time
    8ns
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    7.5mA
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7.5A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.7 V
  • Height
    1.75mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6990AS   Description
  The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes.   FDS6990AS      Features   7.5A, 30V RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V Includes SyncFET Schottky body diode Low gate charge (10nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability
FDS6990AS        Applications
This product is general usage and suitable for many different applications. DC/DC Converters Motor Drives

FDS6990AS More Descriptions
Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R
Dual N-Channel PowerTrench® SyncFET™, 30V, 7.5A, 22mΩ
N CHANNEL MOSFET, 30V, 7.5mA; Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Current Id Max:7.5mA; Operating Temperature Range:-55°C to 150°C; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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