Fairchild/ON Semiconductor FDS6911

Name: FDS6911
Brand: Fairchild/ON Semiconductor
SKU: 2847672-FDS6911
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6911

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847672-FDS6911

Description:: MOSFET 2N-CH 20V 7.5A 8SOIC

ECAD Model:

Datasheet:: FDS6911

Part Pictures

Specifications

Fairchild/ON Semiconductor FDS6911 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6911.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
900mW
Terminal Form
GULL WING
Current Rating
7.5A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
9 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Rise Time
5ns
Fall Time (Typ)
5 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
7.5A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.013Ohm
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.8 V
Height
1.575mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6911 Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low voltage and battery powered applications that require low series power consumption and fast switching. FDS6911 Features rDS(on) = 13 m|? @ VGS = 10 rDS(on) = 17 m|? @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability
FDS6911 Applications
This product is general usage and suitable for many different applications.

FDS6911 More Descriptions

Dual N-Channel PowerTrench® MOSFET, Logic Level, 20V, 7.5A, 13mΩ
Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R
N CHANNEL MOSFET, 20V, SOIC; Transistor; N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:7.5A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0106ohm; Rds(on) Test Voltage Vgs:10V
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.