Fairchild/ON Semiconductor FDR8508P
- Part Number:
- FDR8508P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848410-FDR8508P
- Description:
- MOSFET 2P-CH 30V 3A SSOT-8
- ECAD Model:
-
- Datasheet:
- FDR8508P
Fairchild/ON Semiconductor FDR8508P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDR8508P.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-LSOP (0.130, 3.30mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-30V
- Max Power Dissipation800mW
- Current Rating-3A
- Number of Elements2
- Power Dissipation800mW
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs52m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time14ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)3A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDR8508P Description
The innovative PowerTrench process from Fairchild Semiconductor is used to create these P-Channel 2.5V specified MOSFETs. This process has been carefully designed to reduce on state resistance while maintaining low gate charge for excellent switching performance.
FDR8508P Features
Low entrance fee (8nC typical).
Extremely high performance trench technology
High capacity for managing current and power.
Low profile packaging (1 mm thick), tiny footprint (38 percent smaller than a normal SO-8), and power handling capacity comparable to SO-8
FDR8508P Applications
? Charge switch
? Converter DC/DC
? Driving a car
The innovative PowerTrench process from Fairchild Semiconductor is used to create these P-Channel 2.5V specified MOSFETs. This process has been carefully designed to reduce on state resistance while maintaining low gate charge for excellent switching performance.
FDR8508P Features
Low entrance fee (8nC typical).
Extremely high performance trench technology
High capacity for managing current and power.
Low profile packaging (1 mm thick), tiny footprint (38 percent smaller than a normal SO-8), and power handling capacity comparable to SO-8
FDR8508P Applications
? Charge switch
? Converter DC/DC
? Driving a car
FDR8508P More Descriptions
Trans MOSFET P-CH 30V 3A 8-Pin SuperSOT T/R
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SuperSOT RoHS Compliant: Yes
MOSFET, DUAL PP SUPERSOT-8; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.052ohm; Case style:SuperSOT-8; Current, Idm pulse:20A; Marking, SMD:FDR8508P; Pins, No. of:8; Power dissipation:0.8W; Power, Pd:0.8W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:Dual P; Transistors, No. of:2; Voltage, Vds:30V; Voltage, Vds max:30V; Voltage, Vgs th max:-3V
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SuperSOT RoHS Compliant: Yes
MOSFET, DUAL PP SUPERSOT-8; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.052ohm; Case style:SuperSOT-8; Current, Idm pulse:20A; Marking, SMD:FDR8508P; Pins, No. of:8; Power dissipation:0.8W; Power, Pd:0.8W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:Dual P; Transistors, No. of:2; Voltage, Vds:30V; Voltage, Vds max:30V; Voltage, Vgs th max:-3V
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