Fairchild/ON Semiconductor FDMS3626S
- Part Number:
- FDMS3626S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3553986-FDMS3626S
- Description:
- MOSFET 2N-CH 25V 17.5A/25A 8PQFN
- Datasheet:
- FDMS3626S
Fairchild/ON Semiconductor FDMS3626S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3626S.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight90mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation1W
- JESD-30 CodeR-PDSO-N6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN SOURCE
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual) Asymmetrical
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5m Ω @ 17.5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1570pF @ 13V
- Current - Continuous Drain (Id) @ 25°C17.5A 25A
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)25A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)17.5A
- Drain-source On Resistance-Max0.005Ohm
- Drain to Source Breakdown Voltage25V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.05mm
- Length5.1mm
- Width6.1mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS3626S Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDMS3626S or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDMS3626S. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDMS3626S or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDMS3626S. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDMS3626S More Descriptions
Transistor MOSFET Array Dual N-CH 25V 30A/55A 8-Pin Power 56 T/R - Tape and Reel
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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