Fairchild/ON Semiconductor FDME1034CZT

Name: FDME1034CZT
Brand: Fairchild/ON Semiconductor
SKU: 3553981-FDME1034CZT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDME1034CZT

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3553981-FDME1034CZT

Description:: MOSFET N/P-CH 20V 6-MICROFET

ECAD Model:

Datasheet:: FDME1034CZT

Specifications

Fairchild/ON Semiconductor FDME1034CZT technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDME1034CZT.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Number of Pins
6
Weight
25.2mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
ESD PROTECTION
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Case Connection
DRAIN
Power - Max
600mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
66m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.8A 2.6A
Gate Charge (Qg) (Max) @ Vgs
4.2nC @ 4.5V
Rise Time
4.8ns
Drain to Source Voltage (Vdss)
20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
16 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
3.8A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
3.4A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
700 mV
Feedback Cap-Max (Crss)
40 pF
Height
500μm
Length
1.6mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDME1034CZT Description
The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1034CZT Features
Q1: N?Channel ? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A ? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A ? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A ? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A Q2: P?Channel ? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A ? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A ? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A ? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A ? Low Profile: 0.55 mm Maximum in the New Package MicroFET 1.6x1.6 Thin ? Free from Halogenated Compounds and Antimony Oxides ? HBM ESD Protection Level > 1600 V (Note 3) ? This Device is Pb?Free and is RoHS Compliant
FDME1034CZT Applications
? DC?DC Conversion ? Level Shifted Load Switch

FDME1034CZT More Descriptions

Trans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Certification