Fairchild/ON Semiconductor FDMC8200

Name: FDMC8200
Brand: Fairchild/ON Semiconductor
SKU: 2473532-FDMC8200
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC8200

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473532-FDMC8200

Description:: MOSFET 2N-CH 30V 8A/12A POWER33

ECAD Model:

Datasheet:: FDMC8200

Specifications

Fairchild/ON Semiconductor FDMC8200 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8200.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
23 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
186mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
20MOhm
Subcategory
FET General Purpose Power
Max Power Dissipation
900mW
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.2W
Case Connection
DRAIN-SOURCE
Power - Max
700mW 900mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 15V
Current - Continuous Drain (Id) @ 25°C
8A 12A
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
4ns
Fall Time (Typ)
6 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
2.3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
2.3 V
Feedback Cap-Max (Crss)
30 pF
Turn On Time-Max (ton)
30ns
Height
750μm
Length
3mm
Width
3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC8200 Description The device includes two dedicated N-channel MOSFET in a dual Power33 (3 Mm X 3 Mm MLP) package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.
FDMC8200 Features Q1: N-Channel Max. RDS(on) = 20 mΩ at VGS = 10 V, ID = 6A Max. RDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5A Q2: N-Channel Max. RDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9A Max. RDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7A RoHS Compliant
FDMC8200 Applications
This product is general usage and suitable for many different applications.

FDMC8200 More Descriptions

Transistor MOSFET Array Dual N-CH 30V 23A/45A 8-Pin Power 33 T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ
MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Certification