Fairchild/ON Semiconductor FDMC8097AC
- Part Number:
- FDMC8097AC
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585765-FDMC8097AC
- Description:
- MOSFET N/P-CH 150V
- Datasheet:
- FDMC8097AC
Fairchild/ON Semiconductor FDMC8097AC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8097AC.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight196mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryOther Transistors
- Max Power Dissipation1.9W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationDual
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs155m Ω @ 2.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds395pF @ 75V
- Current - Continuous Drain (Id) @ 25°C2.4A Ta 900mA Tc
- Gate Charge (Qg) (Max) @ Vgs6.2nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Continuous Drain Current (ID)2.4A
- Drain Current-Max (Abs) (ID)6.3A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
FDMC8097AC Description
These dual Nand P channel enhanced mode power MOSFET are produced using Fairchild's advanced power channel process, which is specifically used to minimize on-resistance and maintain excellent switching performance. It shortens the area required to implement the active clamp topology and achieves the best power density of its kind.
FDMC8097AC Features
Q1:N-Channel Maxrps(on)=155m|? at VGs=10 VID=2.4 A Maxrps(on)=212m|?atVGs=6VID=2A Q2: P-Channel Max fps(on)=1200 m|? at VGs=-10VIb=-0.9 A Max rps(on)=1400m|?at VGs=-6VID=-0.8 A Optimised for active clamp forward converters RoHS Compliant FDMC8097AC Applications
DC-DC Converter Active Clamp
Q1:N-Channel Maxrps(on)=155m|? at VGs=10 VID=2.4 A Maxrps(on)=212m|?atVGs=6VID=2A Q2: P-Channel Max fps(on)=1200 m|? at VGs=-10VIb=-0.9 A Max rps(on)=1400m|?at VGs=-6VID=-0.8 A Optimised for active clamp forward converters RoHS Compliant FDMC8097AC Applications
DC-DC Converter Active Clamp
FDMC8097AC More Descriptions
Trans MOSFET N/P-CH 150V 2.4A/0.9A 8-Pin Power33 T/R
Dual N & P-Channel PowerTrench® MOSFET 150V
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Fet 150V Dual N & P Channel Mlp33/Reel |Onsemi FDMC8097AC
MOSFET N/P-CH 150V 2.4A 8PWR33
These Dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.
Dual N & P-Channel PowerTrench® MOSFET 150V
Small Signal Field-Effect Transistor, 6.3A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
Fet 150V Dual N & P Channel Mlp33/Reel |Onsemi FDMC8097AC
MOSFET N/P-CH 150V 2.4A 8PWR33
These Dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.
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