Fairchild/ON Semiconductor FDMC8032L
- Part Number:
- FDMC8032L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473611-FDMC8032L
- Description:
- MOSFET 2N-CH 40V 7A 8-MLP
- ECAD Model:
-
- Datasheet:
- FDMC8032L
Fairchild/ON Semiconductor FDMC8032L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8032L.
- Lifecycle StatusACTIVE (Last Updated: 3 hours ago)
- Factory Lead Time11 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight196mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- Max Power Dissipation12W
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N4
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time5.5 ns
- Power - Max1.9W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds720pF @ 20V
- Current - Continuous Drain (Id) @ 25°C7A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time1.2ns
- Fall Time (Typ)1.3 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7A
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)50A
- Avalanche Energy Rating (Eas)13 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height750μm
- Length3mm
- Width3mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC8032L Description
The device includes two 40V N-channel MOSFET in a dual power supply 33 (3 Mm X 3 Mm MLP) package. The package is enhanced and has excellent heat dissipation performance.
FDMC8032L Features Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant
FDMC8032L Applications
This product is general usage and suitable for many different applications.
The device includes two 40V N-channel MOSFET in a dual power supply 33 (3 Mm X 3 Mm MLP) package. The package is enhanced and has excellent heat dissipation performance.
FDMC8032L Features Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant
FDMC8032L Applications
This product is general usage and suitable for many different applications.
FDMC8032L More Descriptions
Transistor MOSFET Array Dual N-CH 40V 20A 8-Pin Power 33 T/R - Tape and Reel
Dual N-Channel 40 V 20 mOhm Surface Mount PowerTrench Mosfet - Power33
Dual N-Channel PowerTrench® MOSFET 40V, 7A, 20mΩ
MOSFET, DUAL N-CH, 40V, 20A, 12W, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Source Voltage Vds:40V; On
Power Field-Effect Transistor, 7A I(D), 40V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Dual N-Channel 40 V 20 mOhm Surface Mount PowerTrench Mosfet - Power33
Dual N-Channel PowerTrench® MOSFET 40V, 7A, 20mΩ
MOSFET, DUAL N-CH, 40V, 20A, 12W, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Source Voltage Vds:40V; On
Power Field-Effect Transistor, 7A I(D), 40V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
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