Fairchild/ON Semiconductor FDMC8030
- Part Number:
- FDMC8030
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069706-FDMC8030
- Description:
- MOSFET 2N-CH 40V 12A 8MLP
- Datasheet:
- FDMC8030
Fairchild/ON Semiconductor FDMC8030 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8030.
- Lifecycle StatusACTIVE (Last Updated: 3 hours ago)
- Factory Lead Time7 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight196mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2007
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Additional FeatureAVALANCHE RATED
- Max Power Dissipation800mW
- Number of Elements1
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.9W
- Case ConnectionDRAIN SOURCE
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1975pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time3ns
- Drain to Source Voltage (Vdss)40V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)12A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)50A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Feedback Cap-Max (Crss)30 pF
- Height800μm
- Length3mm
- Width3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMC8030 Description
FDMC8030 is a dual N-channel Power Trench MOSFET. The onsemi FDMC8030 includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. The N-channel Power Trench MOSFET FDMC8030 can be applied in Server applications due to the following features. And its ideal operating temperature is between -55 and 150℃.
FDMC8030 Features
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
Termination is Lead-free and RoHS Compliant
In Power-33-8 package
FDMC8030 Applications
Server
Battery Protection
Load Switching
Point of Load
portable electronics
FDMC8030 is a dual N-channel Power Trench MOSFET. The onsemi FDMC8030 includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. The N-channel Power Trench MOSFET FDMC8030 can be applied in Server applications due to the following features. And its ideal operating temperature is between -55 and 150℃.
FDMC8030 Features
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
Termination is Lead-free and RoHS Compliant
In Power-33-8 package
FDMC8030 Applications
Server
Battery Protection
Load Switching
Point of Load
portable electronics
FDMC8030 More Descriptions
Transistor MOSFET Array Dual N-CH 40V 12A 8-Pin Power 33 T/R - Tape and Reel
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
MOSFET Array, Dual N Channel, 40 V, 12 A, 10 Milliohms, Power 33, 8 Pins
MOSFET, DUAL N-CH, 40V, 12A, POWER 33-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
MOSFET Array, Dual N Channel, 40 V, 12 A, 10 Milliohms, Power 33, 8 Pins
MOSFET, DUAL N-CH, 40V, 12A, POWER 33-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
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