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FDMA1025P

Fairchild/ON Semiconductor FDMA1025P

Part Number:
FDMA1025P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473594-FDMA1025P
Description:
MOSFET 2P-CH 20V 3.1A MLP2X2
ECAD Model:
Datasheet:
FDMA1025P

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Specifications
Fairchild/ON Semiconductor FDMA1025P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA1025P.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    40mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    700mW
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    -3.1A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Turn On Delay Time
    5 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    155m Ω @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A
  • Gate Charge (Qg) (Max) @ Vgs
    4.8nC @ 4.5V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    -3.1A
  • Threshold Voltage
    -900mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Pulsed Drain Current-Max (IDM)
    6A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    750μm
  • Length
    2mm
  • Width
    2mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor FDMA1025P is a MOSFET 2P-CH 20V 3.1A MLP2X2 transistor array. It is a dual N-channel MOSFET array designed for use in low voltage, low power applications. The FDMA1025P features a low on-resistance of 3.1A and a maximum drain-source voltage of 20V. It is suitable for use in a variety of applications, including power management, motor control, and switching applications. The FDMA1025P is available in a small MLP2X2 package, making it ideal for space-constrained applications. It also features a low gate charge and low input capacitance, making it suitable for high-speed switching applications. The FDMA1025P is RoHS compliant and is available in a variety of packages.
FDMA1025P More Descriptions
Transistor MOSFET Array Dual P-CH 20V 3.1A 6-Pin MicroFET T/R - Tape and Reel
PowerTrench® MOSFET, Dual P-Channel, -20V, -3.1A, 155mΩ
DC DC Converters 1 (Unlimited) 1 7-SIP Module, 4 Leads Through Hole Isolated Module ITE (Commercial) RFMM (1W) -40°C~85°C 0.77Lx0.28W x 0.40 H 19.6mmx7.1mmx10.2mm DC DC CONVERTER 5V 1W
MOSFET, DUAL, P, SMD, MLP; Transistor type:PowerTrench; Voltage, Vds typ:-20V; Current, Id cont:3.1A; Resistance, Rds on:0.155ohm; Voltage, Vgs Rds on measurement:-4.5V; Voltage, Vgs th typ:-0.9V; Case style:MicroFET; Current, Idm RoHS Compliant: Yes
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.
MOSFET, DUAL, P, SMD, MLP; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On State Resistance:155mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.4W; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:-3.1A; Package / Case:MicroFET; Termination Type:SMD; Transistor Type:Trench; Pulse Current Idm:6A; SMD Marking:025; Voltage Vds Typ:-20V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
Product Comparison
The three parts on the right have similar specifications to FDMA1025P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Resistance
    Case Connection
    Transistor Application
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Radiation Hardening
    Published
    Power - Max
    Nominal Vgs
    Termination
    Dual Supply Voltage
    View Compare
  • FDMA1025P
    FDMA1025P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    40mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -20V
    700mW
    NO LEAD
    NOT SPECIFIED
    -3.1A
    NOT SPECIFIED
    Not Qualified
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    5 ns
    2 P-Channel (Dual)
    155m Ω @ 3.1A, 4.5V
    1.5V @ 250μA
    450pF @ 10V
    3.1A
    4.8nC @ 4.5V
    14ns
    20V
    14 ns
    13 ns
    -3.1A
    -900mV
    12V
    -20V
    6A
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    750μm
    2mm
    2mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMA2002NZ
    FDMA2002NZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    40mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    30V
    650mW
    -
    -
    2.9A
    -
    -
    2
    Dual
    ENHANCEMENT MODE
    1.5W
    6 ns
    2 N-Channel (Dual)
    123m Ω @ 2.9A, 4.5V
    1.5V @ 250μA
    220pF @ 15V
    -
    3nC @ 4.5V
    8ns
    -
    8 ns
    12 ns
    2.9A
    1V
    12V
    30V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    850μm
    2mm
    2mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    123MOhm
    DRAIN
    SWITCHING
    150°C
    30 pF
    No
    -
    -
    -
    -
    -
    FDMA1025P vs FDMA2002NZ
  • FDMA6023PZT
    FDMA6023PZT
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    6
    40mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -
    1.4W
    -
    -
    -
    -
    -
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    13 ns
    2 P-Channel (Dual)
    60m Ω @ 3.6A, 4.5V
    1.5V @ 250μA
    885pF @ 10V
    3.6A
    17nC @ 4.5V
    11ns
    -
    11 ns
    75 ns
    -3.6A
    -500mV
    8V
    20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    500μm
    2mm
    2mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    DRAIN
    SWITCHING
    -
    150 pF
    No
    2008
    700mW
    -500 mV
    -
    -
    FDMA1025P vs FDMA6023PZT
  • FDMA1028NZ
    FDMA1028NZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    40mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    20V
    1.4W
    -
    -
    3.7A
    -
    -
    2
    Dual
    ENHANCEMENT MODE
    1.4W
    8 ns
    2 N-Channel (Dual)
    68m Ω @ 3.7A, 4.5V
    1.5V @ 250μA
    340pF @ 10V
    -
    6nC @ 4.5V
    8ns
    -
    8 ns
    14 ns
    3.7A
    1V
    12V
    20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    750μm
    2mm
    2mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    68MOhm
    DRAIN
    SWITCHING
    -
    -
    No
    2009
    700mW
    1 V
    SMD/SMT
    20V
    FDMA1025P vs FDMA1028NZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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