Fairchild/ON Semiconductor FDG8842CZ

Name: FDG8842CZ
Brand: Fairchild/ON Semiconductor
SKU: 2473276-FDG8842CZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDG8842CZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473276-FDG8842CZ

Description:: MOSFET N/P-CH 30V/25V SC70-6

ECAD Model:

Datasheet:: FDG8842CZ

Specifications

Fairchild/ON Semiconductor FDG8842CZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG8842CZ.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
400MOhm
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
120pF @ 10V
Current - Continuous Drain (Id) @ 25°C
750mA 410mA
Gate Charge (Qg) (Max) @ Vgs
1.44nC @ 4.5V
Rise Time
16ns
Drain to Source Voltage (Vdss)
30V 25V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
16 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
750mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
-8V
Drain Current-Max (Abs) (ID)
0.75A
Drain to Source Breakdown Voltage
25V
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1 V
Height
1mm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDG8842CZ   Description These Numbp channel logic level enhanced mode field effect transistors are manufactured using on Semiconductor's proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is specially designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG8842CZ   Features
Q1: N-Channel Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 RoHS Compliant
FDG8842CZ Applications
  low-voltage applications

FDG8842CZ More Descriptions

Trans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R
Dual N & P-Channel 400 mOhm Complementary PowerTrench MOSFET-SC-70-6
Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Certification