Diodes Incorporated FCX658ATA
- Part Number:
- FCX658ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845060-FCX658ATA
- Description:
- TRANS NPN 400V 0.5A SOT-89
- Datasheet:
- FCX658ATA
Diodes Incorporated FCX658ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FCX658ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberFCX658
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 200mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current500mA
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FCX658ATA Overview
This device has a DC current gain of 35 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.
FCX658ATA Features
the DC current gain for this device is 35 @ 200mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
FCX658ATA Applications
There are a lot of Diodes Incorporated
FCX658ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 35 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.
FCX658ATA Features
the DC current gain for this device is 35 @ 200mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
FCX658ATA Applications
There are a lot of Diodes Incorporated
FCX658ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FCX658ATA More Descriptions
Trans GP BJT NPN 400V 0.5A 1000mW Automotive 4-Pin(3 Tab) SOT-89 T/R
FCX658A Series NPN 3 A 50V Silicon Medium Power High Voltage Transistor - SOT-89
GP BJT NPN 400V 0.5A 4Pin(3 Tab) SOT89 | Diodes Inc FCX658ATA
Transistor, NPN, 400V, 0.5A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:50MHz; Power
TRANSISTOR, NPN, 400V, 0.5A, SOT89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1W; DC Collector Current: 500mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
FCX658A Series NPN 3 A 50V Silicon Medium Power High Voltage Transistor - SOT-89
GP BJT NPN 400V 0.5A 4Pin(3 Tab) SOT89 | Diodes Inc FCX658ATA
Transistor, NPN, 400V, 0.5A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:50MHz; Power
TRANSISTOR, NPN, 400V, 0.5A, SOT89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1W; DC Collector Current: 500mA; DC Current Gain hFE: 35hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
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