Diodes Incorporated FCX593TA
- Part Number:
- FCX593TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463970-FCX593TA
- Description:
- TRANS PNP 100V 1A SOT-89
- Datasheet:
- FCX593TA
Diodes Incorporated FCX593TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FCX593TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-100V
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFCX593
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 25mA, 250mA
- Collector Emitter Breakdown Voltage100V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FCX593TA Overview
This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 25mA, 250mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 1A volts is possible.
FCX593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FCX593TA Applications
There are a lot of Diodes Incorporated
FCX593TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 25mA, 250mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 1A volts is possible.
FCX593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FCX593TA Applications
There are a lot of Diodes Incorporated
FCX593TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FCX593TA More Descriptions
FCX593 Series PNP 1 A 100 V SMT Silicon High Voltage Transistor - SOT-89
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 100V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
100V PNP Power Transistor SOT-89 | Diodes Inc FCX593TA
Trans, Pnp, 100V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. FCX593TA
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 100V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
100V PNP Power Transistor SOT-89 | Diodes Inc FCX593TA
Trans, Pnp, 100V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. FCX593TA
The three parts on the right have similar specifications to FCX593TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingView Compare
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FCX593TA15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-100V1WFLAT260-1A50MHz40FCX593R-PSSO-F31Single1WCOLLECTORSWITCHING50MHzPNPPNP100V1A100 @ 500mA 5V100nA300mV @ 25mA, 250mA100V50MHz-300mV100V120V5V-1A1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantLead Free--
-
15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-60V1WFLAT260-1A150MHz40FCX591R-PSSO-F31Single1WCOLLECTORSWITCHING150MHzPNPPNP60V1A100 @ 500mA 5V100nA600mV @ 100mA, 1A60V150MHz-600mV60V80V5V-1A1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantLead Free-
-
15 WeeksSurface MountSurface MountTO-243AA351.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-30V1WFLAT260-1A100MHz40FCX589-1Single1WCOLLECTORSWITCHING100MHzPNPPNP30V1A100 @ 500mA 2V100nA650mV @ 200mA, 2A30V100MHz-650mV30V50V-5V-1A1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantLead Free-
-
15 WeeksSurface MountSurface MountTO-243AA351.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99--200V1WFLAT260-300mA150MHz40FCX596-1Single1WCOLLECTORSWITCHING150MHzPNPPNP200V300mA85 @ 250mA 10V100nA350mV @ 25mA, 250mA200V150MHz-350mV200V220V5V-300mA1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantLead FreeTin
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