Diodes Incorporated FCX495TA

FCX495TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 150V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

FCX495TA Features
the DC current gain for this device is 100 @ 1mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz


FCX495TA Applications
There are a lot of Diodes Incorporated
FCX495TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting