Rohm Semiconductor EMH4T2R
- Part Number:
- EMH4T2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2462037-EMH4T2R
- Description:
- TRANS 2NPN PREBIAS 0.15W EMT6
- Datasheet:
- EMH4T2R
Rohm Semiconductor EMH4T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMH4T2R.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signals
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MH4
- Pin Count5
- JESD-30 CodeR-PDSO-F5
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation150mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA 5V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMH4T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH4T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH4T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH4T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH4T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMH4T2R More Descriptions
EMH4 Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - EMT-6
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
0.1A I(C) 50V V(BR)CEO 2-Element NPN Silicon
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
0.1A I(C) 50V V(BR)CEO 2-Element NPN Silicon
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