EMH4T2R

Rohm Semiconductor EMH4T2R

Part Number:
EMH4T2R
Manufacturer:
Rohm Semiconductor
Ventron No:
2462037-EMH4T2R
Description:
TRANS 2NPN PREBIAS 0.15W EMT6
ECAD Model:
Datasheet:
EMH4T2R

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Specifications
Rohm Semiconductor EMH4T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMH4T2R.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signals
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MH4
  • Pin Count
    5
  • JESD-30 Code
    R-PDSO-F5
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA 5V
  • Current - Collector Cutoff (Max)
    500nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
EMH4T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH4T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH4T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMH4T2R More Descriptions
EMH4 Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - EMT-6
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
0.1A I(C) 50V V(BR)CEO 2-Element NPN Silicon
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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