ON Semiconductor EMD5DXV6T5G
- Part Number:
- EMD5DXV6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3584881-EMD5DXV6T5G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- Datasheet:
- EMD5DXV6T5G
ON Semiconductor EMD5DXV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMD5DXV6T5G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 2.13
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 20 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)4.7k Ω, 47k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω, 47k Ω
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMD5DXV6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD5DXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD5DXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD5DXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD5DXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMD5DXV6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/4.7Kohm, Sot553; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi EMD5DXV6T5G
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/4.7Kohm, Sot553; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi EMD5DXV6T5G
The three parts on the right have similar specifications to EMD5DXV6T5G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeTransistor Element MaterialReach Compliance CodeJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeTransition FrequencyMax Breakdown VoltageFrequency - TransitionSurface MountVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)View Compare
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EMD5DXV6T5GACTIVE (Last Updated: 3 days ago)17 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 2.13BIP General Purpose Small Signal50V500mWFLAT260100mA406Not Qualified2NPN, PNPDual357mWSWITCHINGHalogen Free1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V / 20 @ 5mA 10V500nA250mV @ 300μA, 10mA50V804.7k Ω, 47k Ω100mA10k Ω, 47k ΩROHS3 CompliantLead Free--------------
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-10 WeeksSurface MountSurface MountSOT-563, SOT-666-Cut Tape (CT)2013--Active1 (Unlimited)6EAR99------150mWFLATNOT SPECIFIED-NOT SPECIFIED--2---SWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)150mV100mA80 @ 5mA 10V500nA150mV @ 500μA, 5mA50V-10k Ω-47k ΩROHS3 Compliant-SILICONnot_compliantR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR150mWNPN AND PNP250MHz50V250MHz----
-
-10 WeeksSurface MountSurface MountSOT-563, SOT-666-Cut Tape (CT)2016--Active1 (Unlimited)6EAR99------150mWFLATNOT SPECIFIED-NOT SPECIFIED--2---SWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)150mV100mA35 @ 5mA 10V500nA150mV @ 500μA, 5mA50V-10k Ω-10k ΩROHS3 Compliant-SILICONnot_compliantR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR150mWNPN AND PNP250MHz50V250MHz----
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---Surface MountSOT-563, SOT-666-Tape & Reel (TR)2014e3-Obsolete1 (Unlimited)--Tin (Sn)---BIP General Purpose Small Signal--------2-----1 NPN, 1 PNP - Pre-Biased (Dual)--80 @ 5mA 10V / 20 @ 5mA 10V500nA250mV @ 300μA, 10mA--4.7k Ω, 47k Ω-10k Ω, 47k ΩRoHS Compliant-SILICONcompliant--500mWNPN/PNP---YES50V100mA0.5W
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