ON Semiconductor EMD5DXV6T1G
- Part Number:
- EMD5DXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462164-EMD5DXV6T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- ECAD Model:
-
- Datasheet:
- EMD5DXV6T1G
ON Semiconductor EMD5DXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMD5DXV6T1G.
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- SubcategoryBIP General Purpose Small Signal
- Reach Compliance Codecompliant
- Number of Elements2
- Power - Max500mW
- Polarity/Channel TypeNPN/PNP
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 20 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Power Dissipation-Max (Abs)0.5W
- Resistor - Base (R1)4.7k Ω, 47k Ω
- Resistor - Emitter Base (R2)10k Ω, 47k Ω
- RoHS StatusRoHS Compliant
EMD5DXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD5DXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD5DXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD5DXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD5DXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMD5DXV6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN/PNP SOT563
IC VREF SHUNT ADJ TO92-3
Complementary Bipolar Digital Transistor (BRT)
TRANS PREBIAS NPN/PNP SOT563
IC VREF SHUNT ADJ TO92-3
The three parts on the right have similar specifications to EMD5DXV6T1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishSubcategoryReach Compliance CodeNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusPbfree CodeNumber of TerminationsAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTransistor ApplicationFactory Lead TimeMountECCN CodeMax Power DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionView Compare
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EMD5DXV6T1GSurface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)2014e3Obsolete1 (Unlimited)Tin (Sn)BIP General Purpose Small Signalcompliant2500mWNPN/PNP1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V / 20 @ 5mA 10V500nA250mV @ 300μA, 10mA50V100mA0.5W4.7k Ω, 47k Ω10k Ω, 47k ΩRoHS Compliant---------------------- -
Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)-e3Obsolete1 (Unlimited)MATTE TIN--2500mWNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V / 20 @ 5mA 10V500nA250mV @ 300μA, 10mA50V100mA-4.7k Ω, 47k Ω10k Ω, 47k ΩROHS3 Compliantyes6BUILT-IN BIAS RESISTOR RATIO IS 2.13FLAT260406R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORSWITCHING----------
-
Surface MountSOT-563, SOT-666-SILICONCut Tape (CT)2013-Active1 (Unlimited)--not_compliant2150mWNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA150mV @ 500μA, 5mA---10k Ω47k ΩROHS3 Compliant-6-FLATNOT SPECIFIEDNOT SPECIFIED-R-PDSO-F6-SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORSWITCHING10 WeeksSurface MountEAR99150mW150mV100mA50V250MHz50V250MHz
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Surface MountSOT-563, SOT-666-SILICONCut Tape (CT)2016-Active1 (Unlimited)--not_compliant2150mWNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)35 @ 5mA 10V500nA150mV @ 500μA, 5mA---10k Ω10k ΩROHS3 Compliant-6-FLATNOT SPECIFIEDNOT SPECIFIED-R-PDSO-F6-SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORSWITCHING10 WeeksSurface MountEAR99150mW150mV100mA50V250MHz50V250MHz
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