Rohm Semiconductor EMD3T2R

Name: EMD3T2R
Brand: Rohm Semiconductor
SKU: 2844397-EMD3T2R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: EMD3T2R

Manufacturer:: Rohm Semiconductor

Ventron No:: 2844397-EMD3T2R

Description:: TRANS NPN/PNP PREBIAS 0.15W EMT6

ECAD Model:

Datasheet:: EMD3T2R

Specifications

Rohm Semiconductor EMD3T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMD3T2R.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
150mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
*MD3
Pin Count
6
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
150mW
Transistor Application
SWITCHING
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
hFE Min
30
Resistor - Base (R1)
10k Ω
Resistor - Emitter Base (R2)
10k Ω
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

EMD3T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD3T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD3T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

EMD3T2R More Descriptions

Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin EMT T/R
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
EMD3 Series 50 V 100 mA SMT NPN/PNP Digital Transistor - EMT-6
Transistor DUAL DIGITAL, EMT PNP/NPN; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Bias Transistor, 10K/10K, Sc-107C-6; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Rohm EMD3T2R
TRANSISTOR DUAL DIGITAL, EMT PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: -; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 150mW; Transistor Case Style: EMT; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

Certification