Rohm Semiconductor EM6K34T2CR
- Part Number:
- EM6K34T2CR
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2473307-EM6K34T2CR
- Description:
- MOSFET 2N-CH 50V 0.2A EMT6
- ECAD Model:
-
- Datasheet:
- EM6K34T2CR
Rohm Semiconductor EM6K34T2CR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EM6K34T2CR.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation120mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power - Max120mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs2.2 Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id800mV @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds26pF @ 10V
- Drain to Source Voltage (Vdss)50V
- Continuous Drain Current (ID)200mA
- FET FeatureLogic Level Gate, 0.9V Drive
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EM6K34T2CR Description
The technical material speified above is meant only to show the typlical functions of and examples of application circuits for the Products. You are not given any permission by ROHM, either explicitly or implicitly, to utilize or exploit any intellectual property rights or other rights that ROHM and third parties may have. For any disagreement resulting from the use of such technical knowledge, ROHM shall have no liability. The Goods included in this page are designed to work with general-purpose electronic equipment or gadgets (such audio visual equipment, office automation equipment, communication devices, electronic appliances, and gadgets for fun).
EM6K34T2CR Features
High speed switing. Small package(EMT6). Ultra low voltage drive(0.9V drive).
EM6K34T2CR Applications
Switching
The technical material speified above is meant only to show the typlical functions of and examples of application circuits for the Products. You are not given any permission by ROHM, either explicitly or implicitly, to utilize or exploit any intellectual property rights or other rights that ROHM and third parties may have. For any disagreement resulting from the use of such technical knowledge, ROHM shall have no liability. The Goods included in this page are designed to work with general-purpose electronic equipment or gadgets (such audio visual equipment, office automation equipment, communication devices, electronic appliances, and gadgets for fun).
EM6K34T2CR Features
High speed switing. Small package(EMT6). Ultra low voltage drive(0.9V drive).
EM6K34T2CR Applications
Switching
EM6K34T2CR More Descriptions
Transistor MOSFET Array Dual N-CH 50V 200mA 6-Pin SOT-563 T/RAvnet Japan
Dual N-Channel 50 V 0.2 A 0.15 W Surface Mount Mosfet - SOT-563
Trans MOSFET N-CH Si 50V 0.2A 6-Pin EMT T/R
0.9V Drive Nch Nch Mosfet, High Speed Switching, Low Voltage. Rohs Compliant: Yes |Rohm EM6K34T2CR
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL N-CH, 50V, SOT-563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
IC AMP CLASS AB STER 290MW 20QFN
Dual N-Channel 50 V 0.2 A 0.15 W Surface Mount Mosfet - SOT-563
Trans MOSFET N-CH Si 50V 0.2A 6-Pin EMT T/R
0.9V Drive Nch Nch Mosfet, High Speed Switching, Low Voltage. Rohs Compliant: Yes |Rohm EM6K34T2CR
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL N-CH, 50V, SOT-563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
IC AMP CLASS AB STER 290MW 20QFN
The three parts on the right have similar specifications to EM6K34T2CR.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Max Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)FET FeatureRoHS StatusLead FreeNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormBase Part NumberPin CountNumber of ElementsNumber of ChannelsOperating ModeTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyRadiation HardeningElement ConfigurationPower DissipationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
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EM6K34T2CR16 WeeksSurface MountSurface MountSOT-563, SOT-666150°C TJCut Tape (CT)yesActive1 (Unlimited)120mWNOT SPECIFIEDNOT SPECIFIED120mW2 N-Channel (Dual)2.2 Ω @ 200mA, 4.5V800mV @ 1mA26pF @ 10V50V200mALogic Level Gate, 0.9V DriveROHS3 CompliantLead Free---------------------------- -
16 WeeksSurface MountSurface MountSOT-563, SOT-666150°C TJCut Tape (CT)-Active1 (Unlimited)120mW--120mW2 N-Channel (Dual)2.4 Ω @ 250mA, 10V2.3V @ 1mA15pF @ 25V60V250mALogic Level Gate, 2.5V DriveROHS3 Compliant----------------------------
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16 WeeksSurface MountSurface MountSOT-563, SOT-666150°C TJTape & Reel (TR)yesActive1 (Unlimited)120mW26010150mW2 N-Channel (Dual)2.4 Ω @ 250mA, 10V2.3V @ 1mA15pF @ 25V60V250mALogic Level GateROHS3 CompliantLead Free6SILICON2010e26EAR99Tin/Copper (Sn/Cu)FET General Purpose PowerFLAT*K31622ENHANCEMENT MODE3.5 nsSWITCHING5ns28 ns18 ns20V60VMETAL-OXIDE SEMICONDUCTORNo----
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16 WeeksSurface MountSurface MountSOT-563, SOT-666150°C TJTape & Reel (TR)yesActive1 (Unlimited)150mW26010-2 N-Channel (Dual)1 Ω @ 300mA, 4V1V @ 1mA25pF @ 10V20V300mALogic Level GateROHS3 CompliantLead Free6SILICON2007e26EAR99TIN COPPERFET General Purpose PowerFLAT*K662-ENHANCEMENT MODE5 nsSWITCHING10ns10 ns15 ns8V20VMETAL-OXIDE SEMICONDUCTORNoDual150mW0.3A1.4Ohm
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