Diodes Incorporated DZT5551Q-13

Name: DZT5551Q-13
Brand: Diodes Incorporated
SKU: 2467164-DZT5551Q-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DZT5551Q-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2467164-DZT5551Q-13

Description:: TRANS NPN 160V 600MA SOT223

ECAD Model:

Datasheet:: DZT5551Q-13

Specifications

Diodes Incorporated DZT5551Q-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DZT5551Q-13.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
130MHz
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant

Description

DZT5551Q-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The part has a transition frequency of 130MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

DZT5551Q-13 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 130MHz

DZT5551Q-13 Applications
There are a lot of Diodes Incorporated
DZT5551Q-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DZT5551Q-13 More Descriptions

160V 2W 80@10mA,5V 600mA NPN SOT-223 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 160V 0.6A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 160V, 0.6A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. DZT5551Q-13

Certification