Diodes Incorporated DXTN07100BP5-13

Name: DXTN07100BP5-13
Brand: Diodes Incorporated
SKU: 2464015-DXTN07100BP5-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DXTN07100BP5-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2464015-DXTN07100BP5-13

Description:: TRANS NPN 100V 2A POWERDI5

ECAD Model:

Datasheet:: DXTN07100BP5-13

Specifications

Diodes Incorporated DXTN07100BP5-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DXTN07100BP5-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Weight
95.991485mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.2W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
175MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.2W
Power - Max
740mW
Transistor Application
SWITCHING
Gain Bandwidth Product
175MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-252
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
175MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DXTN07100BP5-13 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.

DXTN07100BP5-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz

DXTN07100BP5-13 Applications
There are a lot of Diodes Incorporated
DXTN07100BP5-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DXTN07100BP5-13 More Descriptions

DIODES INC. DXTN07100BP5-13 Bipolar (BJT) Single Transistor, POWERDI5, NPN, 100 V, 175 MHz, 3.2 W, 2 A, 200 hFE
Trans GP BJT NPN 100V 2A 3200mW 3-Pin(3 Tab) PowerDI 5 T/R
TRANS, NPN, 100V, 2A, POWERDI5; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 3.2W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: PowerDI5; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 175MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Certification