Diodes Incorporated DXT5551-13

Name: DXT5551-13
Brand: Diodes Incorporated
SKU: 3068678-DXT5551-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DXT5551-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3068678-DXT5551-13

Description:: TRANS NPN 160V 0.6A SOT89-3

ECAD Model:

Datasheet:: DXT5551-13

Specifications

Diodes Incorporated DXT5551-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DXT5551-13.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DXT5551
Pin Count
4
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DXT5551-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 600mA volts.

DXT5551-13 Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

DXT5551-13 Applications
There are a lot of Diodes Incorporated
DXT5551-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DXT5551-13 More Descriptions

NPN 160 V 600 mA 0.75 W Surface Mount Transistor - SOT-89
Trans GP BJT NPN 160V 0.6A 1000mW 4-Pin(3 Tab) SOT-89 T/R
TRANS NPN 160V 0.6A SOT89-3 | Diodes Inc DXT5551-13

Certification