Diodes Incorporated DSL12AW-7

Name: DSL12AW-7
Brand: Diodes Incorporated
SKU: 3585240-DSL12AW-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DSL12AW-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3585240-DSL12AW-7

Description:: TRANS PNP 12V 2A SOT363

ECAD Model:

Datasheet:: DSL12AW-7

Specifications

Diodes Incorporated DSL12AW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSL12AW-7.

Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
450mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power - Max
450mW
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
290mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 800mA 1.5 V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
290mV @ 20mA, 1A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
-290mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
-12V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-2A
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DSL12AW-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 800mA 1.5 V.With a collector emitter saturation voltage of -290mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 20mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 2A volts at its maximum.

DSL12AW-7 Features
the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -290mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 180MHz

DSL12AW-7 Applications
There are a lot of Diodes Incorporated
DSL12AW-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DSL12AW-7 More Descriptions

DSL12AW Series 12 V 2 A 450 mW PNP Surface Mount Transistor - SOT-363
Trans GP BJT PNP 12V 2A 650mW 6-Pin SOT-363 T/R
PNP, 12V, 2A, SOT363, 180MHzDiodes Inc SCT

Certification