Panasonic Electronic Components DSCQ00100L
- Part Number:
- DSCQ00100L
- Manufacturer:
- Panasonic Electronic Components
- Ventron No:
- 2463842-DSCQ00100L
- Description:
- TRANS NPN 50V 0.1A USSMINI3
- Datasheet:
- DSCQ001
Panasonic Electronic Components DSCQ00100L technical specifications, attributes, parameters and parts with similar specifications to Panasonic Electronic Components DSCQ00100L.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-1123
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- Max Power Dissipation100mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Reach Compliance Codeunknown
- Base Part NumberDSCQ001
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce210 @ 2mA 10V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency150MHz
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage130mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min210
- Height380μm
- Length600μm
- Width850μm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
DSCQ00100L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 2mA 10V DC current gain.As it features a collector emitter saturation voltage of 130mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
DSCQ00100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSCQ00100L Applications
There are a lot of Panasonic Electronic Components
DSCQ00100L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 2mA 10V DC current gain.As it features a collector emitter saturation voltage of 130mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
DSCQ00100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSCQ00100L Applications
There are a lot of Panasonic Electronic Components
DSCQ00100L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DSCQ00100L More Descriptions
SC,SMALL SIGNAL BIPOLAR TRANSISTOR / NPN SINGLE, GENERAL PURPOSE, VCEO:50V, IC:100MA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.1A 3-Pin(2 Tab) USSMini3-F1-B T/R
DSCQ00100L NPN Bipolar Transistor, 0.1 A, 50 V, 3-Pin Mini3 F1 B | Panasonic Electronic Components DSCQ00100L
Bipolar Transistors - BJT SM SIG BIPLR TRANS FLT LD 0.6x1.0mm
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.1A 3-Pin(2 Tab) USSMini3-F1-B T/R
DSCQ00100L NPN Bipolar Transistor, 0.1 A, 50 V, 3-Pin Mini3 F1 B | Panasonic Electronic Components DSCQ00100L
Bipolar Transistors - BJT SM SIG BIPLR TRANS FLT LD 0.6x1.0mm
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