DP350T05-7

Diodes Incorporated DP350T05-7

Part Number:
DP350T05-7
Manufacturer:
Diodes Incorporated
Ventron No:
2463840-DP350T05-7
Description:
TRANS PNP 350V 0.5A SOT23-3
ECAD Model:
Datasheet:
DP350T05-7

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Specifications
Diodes Incorporated DP350T05-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DP350T05-7.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -350V
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -500mA
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DP350T05
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    350V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    350V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -1V
  • Max Breakdown Voltage
    350V
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    20
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DP350T05-7 Overview
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.

DP350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz


DP350T05-7 Applications
There are a lot of Diodes Incorporated
DP350T05-7 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
DP350T05-7 More Descriptions
DP350T05 Series PNP 350 V 300 mW Small Signal Surface Mount Transistor-SOT-23-3
BIPOLAR TRANSISTOR SMALL SIGNAL PNP SOT-23 ROHS 3KTrans GP BJT PNP 350V 0.5A Automotive 3-Pin SOT-23 T/R
Transistor PNP 350V 0.5A SOT23 | Diodes Inc DP350T05-7
BIPOLAR, TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:20; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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