Diodes Incorporated DP350T05-7
- Part Number:
- DP350T05-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463840-DP350T05-7
- Description:
- TRANS PNP 350V 0.5A SOT23-3
- Datasheet:
- DP350T05-7
Diodes Incorporated DP350T05-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DP350T05-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-350V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDP350T05
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-1V
- Max Breakdown Voltage350V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)-5V
- hFE Min20
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DP350T05-7 Overview
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.
DP350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
DP350T05-7 Applications
There are a lot of Diodes Incorporated
DP350T05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.
DP350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
DP350T05-7 Applications
There are a lot of Diodes Incorporated
DP350T05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DP350T05-7 More Descriptions
DP350T05 Series PNP 350 V 300 mW Small Signal Surface Mount Transistor-SOT-23-3
BIPOLAR TRANSISTOR SMALL SIGNAL PNP SOT-23 ROHS 3KTrans GP BJT PNP 350V 0.5A Automotive 3-Pin SOT-23 T/R
Transistor PNP 350V 0.5A SOT23 | Diodes Inc DP350T05-7
BIPOLAR, TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:20; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
BIPOLAR TRANSISTOR SMALL SIGNAL PNP SOT-23 ROHS 3K
Transistor PNP 350V 0.5A SOT23 | Diodes Inc DP350T05-7
BIPOLAR, TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:20; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
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