Diodes Incorporated DNLS350E-13

Name: DNLS350E-13
Brand: Diodes Incorporated
SKU: 2845984-DNLS350E-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DNLS350E-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2845984-DNLS350E-13

Description:: TRANS NPN 50V 3A SOT-223

ECAD Model:

Datasheet:: DNLS350E-13

Specifications

Diodes Incorporated DNLS350E-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DNLS350E-13.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DNLS350
Pin Count
4
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
290mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
290mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
3A
Height
1.6mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DNLS350E-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

DNLS350E-13 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

DNLS350E-13 Applications
There are a lot of Diodes Incorporated
DNLS350E-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DNLS350E-13 More Descriptions

50V 1W 100@2A,2V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 50V 3A 3000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 50V 3A SOT-223
DNLS350 Series NPN 3 W 50V 3A Surface Mount General Purpose Transistor - SOT-223
Low VCE(sat) NPN Transistor SOT-223 | Diodes Inc DNLS350E-13

Product Comparison

The three parts on the right have similar specifications to DNLS350E-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Additional Feature

Frequency

Power Dissipation

Lead Free

Power - Max

hFE Min

Manufacturer Package Identifier

View Compare
DNLS350E-13

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

1W

DUAL

GULL WING

260

40

DNLS350

4

1

Single

COLLECTOR

SWITCHING

100MHz

NPN

NPN

50V

3A

100 @ 2A 2V

100nA ICBO

290mV @ 200mA, 2A

50V

100MHz

290mV

50V

60V

6V

3A

1.6mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-
DNLS160-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

300mW

DUAL

GULL WING

260

40

DNLS160

3

1

Single

-

-

270MHz

NPN

NPN

60V

1A

200 @ 500mA 5V

100nA

250mV @ 100mA, 1A

60V

270MHz

250mV

60V

80V

5V

-

1.1mm

3mm

1.4mm

No SVHC

No

ROHS3 Compliant

HIGH RELIABILITY

270MHz

300mW

Lead Free

-

-

-

DNLS350E-13 vs DNLS160-7
DNLS320A-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

600mW

DUAL

GULL WING

260

40

DNLS320

3

1

Single

-

SWITCHING

220MHz

NPN

NPN

20V

2A

220 @ 1A 2V

100nA ICBO

310mV @ 300mA, 3A

20V

220MHz

-

20V

20V

5V

-

1.1mm

3mm

1.4mm

-

No

ROHS3 Compliant

HIGH RELIABILITY

-

-

-

600mW

220

-

DNLS350E-13 vs DNLS320A-7
DNLS320E-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

1W

DUAL

GULL WING

260

40

DNLS320

4

1

Single

COLLECTOR

SWITCHING

150MHz

NPN

NPN

20V

3A

400 @ 2A 2V

100nA ICBO

450mV @ 20mA, 3A

20V

150MHz

450mV

20V

20V

5V

-

1.6mm

6.5mm

3.5mm

No SVHC

No

ROHS3 Compliant

-

150MHz

1W

Lead Free

-

-

DNLS320E-13

DNLS350E-13 vs DNLS320E-13