Diodes Incorporated DMS3017SSD-13

Name: DMS3017SSD-13
Brand: Diodes Incorporated
SKU: 2474736-DMS3017SSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMS3017SSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2474736-DMS3017SSD-13

Description:: MOSFET 2N-CH 30V 8A/6A 8SO

ECAD Model:

Datasheet:: DMS3017SSD

Specifications

Diodes Incorporated DMS3017SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMS3017SSD-13.

Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
1.19W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.79W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1276pF @ 15V
Current - Continuous Drain (Id) @ 25°C
8A 6A
Gate Charge (Qg) (Max) @ Vgs
30.6nC @ 10V
Continuous Drain Current (ID)
8A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
10A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
2.5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

Diodes Inc. Transistors - FETs, MOSFETs - Arrays DMS3017SSD-13 is a dual N-channel MOSFET device designed for use in a wide range of applications. It features a VDSS of 30V, VGSS of 20V, and an RDS(on) of 0.0017 Ohm. It has an ID of 25A, making it suitable for high-current applications. It is designed to provide low on-resistance and low gate charge, making it ideal for use in power management and switching applications. It is also suitable for use in high-frequency switching applications, such as in DC-DC converters. It is also suitable for use in automotive applications, such as in powertrain and body control systems.

DMS3017SSD-13 More Descriptions

Trans MOSFET N-CH 30V 10A/7.2A Automotive 8-Pin SO T/R
MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V
MOSFET, SCH,NN CH,30V,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.19W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 8A; Current Id Max: 7.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.0085ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Certification