DMNH6022SSD-13

Diodes Incorporated DMNH6022SSD-13

Part Number:
DMNH6022SSD-13
Manufacturer:
Diodes Incorporated
Ventron No:
2847770-DMNH6022SSD-13
Description:
MOSFET 2NCH 60V 7.1A 8SO
ECAD Model:
Datasheet:
DMNH6022SSD-13

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Specifications
Diodes Incorporated DMNH6022SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMNH6022SSD-13.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Max Power Dissipation
    1.5W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G8
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2127pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.1A 22.6A
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    22.6A
  • Drain Current-Max (Abs) (ID)
    7.1A
  • Drain-source On Resistance-Max
    0.03Ohm
  • Pulsed Drain Current-Max (IDM)
    45A
  • DS Breakdown Voltage-Min
    60V
  • Avalanche Energy Rating (Eas)
    24 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status
    ROHS3 Compliant
Description
DMNH6022SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMNH6022SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMNH6022SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMNH6022SSD-13 More Descriptions
Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 7.1A 8-Pin SO T/R
MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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