Diodes Incorporated DMNH6022SSD-13
- Part Number:
- DMNH6022SSD-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2847770-DMNH6022SSD-13
- Description:
- MOSFET 2NCH 60V 7.1A 8SO
- Datasheet:
- DMNH6022SSD-13
Diodes Incorporated DMNH6022SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMNH6022SSD-13.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2016
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- Max Power Dissipation1.5W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs27m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2127pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.1A 22.6A
- Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Continuous Drain Current (ID)22.6A
- Drain Current-Max (Abs) (ID)7.1A
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)45A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)24 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
DMNH6022SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMNH6022SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMNH6022SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMNH6022SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMNH6022SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMNH6022SSD-13 More Descriptions
Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 7.1A 8-Pin SO T/R
MOSFET 2N-CH 60V 7.1A/22.6A 8SO
60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 7.1A 8-Pin SO T/R
MOSFET 2N-CH 60V 7.1A/22.6A 8SO
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