DMN53D0LDW-7

Diodes Incorporated DMN53D0LDW-7

Part Number:
DMN53D0LDW-7
Manufacturer:
Diodes Incorporated
Ventron No:
3069680-DMN53D0LDW-7
Description:
MOSFET 2N-CH 50V 0.36A SOT363
ECAD Model:
Datasheet:
DMN53D0LDW-7

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Specifications
Diodes Incorporated DMN53D0LDW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN53D0LDW-7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Weight
    6.010099mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Power Dissipation
    310mW
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Turn On Delay Time
    2.7 ns
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    1.6 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    46pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    0.6nC @ 4.5V
  • Rise Time
    2.5ns
  • Drain to Source Voltage (Vdss)
    50V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    360mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    50V
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
DMN53D0LDW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN53D0LDW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN53D0LDW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN53D0LDW-7 More Descriptions
Transistor MOSFET Array Dual N-CH 50V 360mA 3-Pin SOT-363 T/RAvnet Japan
Transistor, dual N-channel, enhancement mode, 50V, 0.36A, MOSFET, SOT-363 | Diodes Inc DMN53D0LDW-7
Dual N-Channel 50 V 310 mW 0.6 nC Silicon Surface Mount Mosfet - SOT-363
Product Range:-; Qualification:-; MSL:-; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:50V RoHS Compliant: No
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 1.6 Ω @ 500mA, 10V 1.5V @ 250μA MOSFET 2N-CH 50V 0.36A SOT363
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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