DMN2215UDM-7

Diodes Incorporated DMN2215UDM-7

Part Number:
DMN2215UDM-7
Manufacturer:
Diodes Incorporated
Ventron No:
3585669-DMN2215UDM-7
Description:
MOSFET 2N-CH 20V 2A SOT-26
ECAD Model:
Datasheet:
DMN2215UDM-7

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Specifications
Diodes Incorporated DMN2215UDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2215UDM-7.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    650mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMN2215UDM
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    650mW
  • Turn On Delay Time
    8 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    188pF @ 10V
  • Rise Time
    3.8ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    3.8 ns
  • Turn-Off Delay Time
    19.6 ns
  • Continuous Drain Current (ID)
    2A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain-source On Resistance-Max
    0.1Ohm
  • Drain to Source Breakdown Voltage
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.6mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2215UDM-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2215UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2215UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN2215UDM-7 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin SOT-26 T/RAvnet Japan
DUAL N-CHANNEL 20V, 1.4A, 0.1 ohms @ 4.5V, SOT-26
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N N DUAL-CHAN.-FET 20V 2A SOT26 RoHSconf
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
Mosfet, Dual N-Ch, 20V, Sot-26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes |Diodes Inc. DMN2215UDM-7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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