Diodes Incorporated DMN2215UDM-7
- Part Number:
- DMN2215UDM-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585669-DMN2215UDM-7
- Description:
- MOSFET 2N-CH 20V 2A SOT-26
- Datasheet:
- DMN2215UDM-7
Diodes Incorporated DMN2215UDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2215UDM-7.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Max Power Dissipation650mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMN2215UDM
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation650mW
- Turn On Delay Time8 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds188pF @ 10V
- Rise Time3.8ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)3.8 ns
- Turn-Off Delay Time19.6 ns
- Continuous Drain Current (ID)2A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)2A
- Drain-source On Resistance-Max0.1Ohm
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.1mm
- Length3mm
- Width1.6mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2215UDM-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2215UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2215UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2215UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2215UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN2215UDM-7 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin SOT-26 T/RAvnet Japan
DUAL N-CHANNEL 20V, 1.4A, 0.1 ohms @ 4.5V, SOT-26
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N N DUAL-CHAN.-FET 20V 2A SOT26 RoHSconf
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
Mosfet, Dual N-Ch, 20V, Sot-26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes |Diodes Inc. DMN2215UDM-7
DUAL N-CHANNEL 20V, 1.4A, 0.1 ohms @ 4.5V, SOT-26
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N N DUAL-CHAN.-FET 20V 2A SOT26 RoHSconf
N-Channel Mosfet, 20V VDS, 12±V VGSDiodes Inc SCT
Mosfet, Dual N-Ch, 20V, Sot-26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes |Diodes Inc. DMN2215UDM-7
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