Diodes Incorporated DMN2005DLP4K-7

Name: DMN2005DLP4K-7
Brand: Diodes Incorporated
SKU: 3585761-DMN2005DLP4K-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN2005DLP4K-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3585761-DMN2005DLP4K-7

Description:: MOSFET 2N-CH 20V 0.3A 6-DFN

ECAD Model:

Datasheet:: DMN2005DLP4K-7

Specifications

Diodes Incorporated DMN2005DLP4K-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2005DLP4K-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Powers
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMN2005DLP4K
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
400mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id
900mV @ 100μA
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
300mA
Gate to Source Voltage (Vgs)
10V
Drain-source On Resistance-Max
3.5Ohm
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Height
350μm
Length
1.3mm
Width
1mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Diodes Inc. Transistors - FETs, MOSFETs - Arrays DMN2005DLP4K-7 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a 2N-CH (2-N Channel) configuration. It has a 20V drain-source voltage rating and a 0.3A drain current rating. It is packaged in a 6-DFN (2x2) package.

Features of the DMN2005DLP4K-7 include low on-resistance, low gate charge, low input and output capacitance, and fast switching speed. It is also RoHS compliant and has a high temperature rating of 175°C.

Applications of the DMN2005DLP4K-7 include power management, motor control, and switching applications. It is suitable for use in automotive, industrial, and consumer electronics.

DMN2005DLP4K-7 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 300mA 6-Pin X2-DFN1310 T/R
Dual N-Channel 20 V 1.5 Ohm Enhancement Mode Mosfet - DFN-6
Drain Source Voltage Vds:20V; Continuous Drain Current Id:300Ma; Product Range:-; Automotive Qualification Standard:-; Msl:- Rohs Compliant: No

Certification