Diodes Incorporated DMN2041LSD-13
- Part Number:
- DMN2041LSD-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473490-DMN2041LSD-13
- Description:
- MOSFET 2N-CH 20V 7.63A 8SO
- Datasheet:
- DMN2041LSD-13
Diodes Incorporated DMN2041LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2041LSD-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Max Power Dissipation1.16W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMN2041LSD
- Pin Count8
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.16W
- Turn On Delay Time4.69 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 6A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs15.6nC @ 10V
- Rise Time13.19ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)6.43 ns
- Turn-Off Delay Time22.1 ns
- Continuous Drain Current (ID)7.63A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)7.6A
- Pulsed Drain Current-Max (IDM)30A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.5mm
- Length4.95mm
- Width3.95mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN2041LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2041LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2041LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2041LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2041LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN2041LSD-13 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/RAvnet Japan
Dual Mosfet, N-Ch, 20V, 7.63A, Soic Rohs Compliant: Yes |Diodes Inc. DMN2041LSD-13
Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
Dual Mosfet, N-Ch, 20V, 7.63A, Soic Rohs Compliant: Yes |Diodes Inc. DMN2041LSD-13
Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
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