DMN2041LSD-13

Diodes Incorporated DMN2041LSD-13

Part Number:
DMN2041LSD-13
Manufacturer:
Diodes Incorporated
Ventron No:
2473490-DMN2041LSD-13
Description:
MOSFET 2N-CH 20V 7.63A 8SO
ECAD Model:
Datasheet:
DMN2041LSD-13

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Specifications
Diodes Incorporated DMN2041LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2041LSD-13.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    1.16W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMN2041LSD
  • Pin Count
    8
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.16W
  • Turn On Delay Time
    4.69 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 6A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    15.6nC @ 10V
  • Rise Time
    13.19ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    6.43 ns
  • Turn-Off Delay Time
    22.1 ns
  • Continuous Drain Current (ID)
    7.63A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    7.6A
  • Pulsed Drain Current-Max (IDM)
    30A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN2041LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2041LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2041LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN2041LSD-13 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/RAvnet Japan
Dual Mosfet, N-Ch, 20V, 7.63A, Soic Rohs Compliant: Yes |Diodes Inc. DMN2041LSD-13
Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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