Diodes Incorporated DMN2004DWK-7

Name: DMN2004DWK-7
Brand: Diodes Incorporated
SKU: 2473474-DMN2004DWK-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN2004DWK-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473474-DMN2004DWK-7

Description:: MOSFET 2N-CH 20V 0.54A SOT-363

ECAD Model:

Datasheet:: DMN2004DWK-7

Specifications

Diodes Incorporated DMN2004DWK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2004DWK-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
550mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
200mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
540mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMN2004DWK
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
4.1 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 16V
Turn-Off Delay Time
13.8 ns
Continuous Drain Current (ID)
540mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.54A
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
1.1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN2004DWK-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN2004DWK-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN2004DWK-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN2004DWK-7 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 540mA 6-Pin SOT-363 T/RAvnet Japan
Dual N-Channel 20 V 550 mOhm Surface Mount Enhancement Mode Mosfet-SOT-363
Trans MOSFET N-CH 20V 0.54A Automotive 6-Pin SOT-363 T/R
MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 540mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification