Diodes Incorporated DMMT5551S-7-F
- Part Number:
- DMMT5551S-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2461250-DMMT5551S-7-F
- Description:
- TRANS 2NPN 160V 0.2A SOT26
- Datasheet:
- DMMT5551S-7-F
Diodes Incorporated DMMT5551S-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMMT5551S-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Weight29.993795mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMMT5551
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Transistor Type2 NPN (Dual) Matched Pair
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- Height1.1mm
- Length3mm
- Width1.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMMT5551S-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMMT5551S-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMMT5551S-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMMT5551S-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMMT5551S-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMMT5551S-7-F More Descriptions
Bipolar Array, Dual Npn, 160V/0.2A/Sot26 Rohs Compliant: Yes |Diodes Inc. DMMT5551S-7-F
Bipolar Transistors - BJT NPN BIPOLAR
High Voltage Transistor (Matched hFE, VCE(sat) & VBE(sat)), 0.2A, 0.3WDiodes Inc SCT
Bipolar Transistors - BJT NPN BIPOLAR
High Voltage Transistor (Matched hFE, VCE(sat) & VBE(sat)), 0.2A, 0.3WDiodes Inc SCT
The three parts on the right have similar specifications to DMMT5551S-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusContact PlatingToleranceResistanceVoltage - RatedPower RatingVoltage - Rated DCCurrent RatingCase Code (Metric)Case Code (Imperial)hFE MinLead FreeMax Junction Temperature (Tj)Continuous Collector CurrentTurn On Time-Max (ton)Additional FeaturePower - MaxTurn Off Time-Max (toff)View Compare
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DMMT5551S-7-F19 WeeksSurface MountSurface MountSOT-23-6629.993795mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors300mWGULL WING260300MHz40DMMT555162NPNDual300mWSWITCHING300MHz2 NPN (Dual) Matched Pair160V200mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V100MHz200mV160V180V6V1.1mm3mm1.6mmNo SVHCNoROHS3 Compliant------------------
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19 WeeksSurface MountSurface MountSOT-23-6629.993795mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99-Other Transistors300mWGULL WING260300MHz40DMMT540162PNPDual300mWSWITCHING300MHz2 PNP (Dual) Matched Pair150V200mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V100MHz-500mV150V160V5V450μm1.6mm800μmNo SVHCNoROHS3 CompliantTin1%56.2kOhm50V100mW-150V-200mA1608060360Lead Free------
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15 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-65°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99-Other Transistors200mWGULL WING260300MHz40DMMT390462NPNDual200mW-300MHz2 NPN (Dual) Matched Pair40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V1.1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantTin----40V200mA--30Lead Free150°C200mA70ns---
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6 WeeksSurface MountSurface MountSOT-23-66-SILICON-55°C~150°C TJCut Tape (CT)2013e3yesDiscontinued1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors1.28WGULL WING260-40DMMT290762PNPDual-SWITCHING307MHz2 PNP (Dual)1.6V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V307MHz-60V-60V-5V---No SVHCNoROHS3 Compliant-------------600mA21nsHIGH RELIABILITY900mW200ns
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