DMMT5551S-7-F

Diodes Incorporated DMMT5551S-7-F

Part Number:
DMMT5551S-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2461250-DMMT5551S-7-F
Description:
TRANS 2NPN 160V 0.2A SOT26
ECAD Model:
Datasheet:
DMMT5551S-7-F

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Specifications
Diodes Incorporated DMMT5551S-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMMT5551S-7-F.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Number of Pins
    6
  • Weight
    29.993795mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMMT5551
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    300MHz
  • Transistor Type
    2 NPN (Dual) Matched Pair
  • Collector Emitter Voltage (VCEO)
    160V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    160V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    200mV
  • Max Breakdown Voltage
    160V
  • Collector Base Voltage (VCBO)
    180V
  • Emitter Base Voltage (VEBO)
    6V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMMT5551S-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMMT5551S-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMMT5551S-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMMT5551S-7-F More Descriptions
Bipolar Array, Dual Npn, 160V/0.2A/Sot26 Rohs Compliant: Yes |Diodes Inc. DMMT5551S-7-F
Bipolar Transistors - BJT NPN BIPOLAR
High Voltage Transistor (Matched hFE, VCE(sat) & VBE(sat)), 0.2A, 0.3WDiodes Inc SCT
Product Comparison
The three parts on the right have similar specifications to DMMT5551S-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Contact Plating
    Tolerance
    Resistance
    Voltage - Rated
    Power Rating
    Voltage - Rated DC
    Current Rating
    Case Code (Metric)
    Case Code (Imperial)
    hFE Min
    Lead Free
    Max Junction Temperature (Tj)
    Continuous Collector Current
    Turn On Time-Max (ton)
    Additional Feature
    Power - Max
    Turn Off Time-Max (toff)
    View Compare
  • DMMT5551S-7-F
    DMMT5551S-7-F
    19 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    29.993795mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    Other Transistors
    300mW
    GULL WING
    260
    300MHz
    40
    DMMT5551
    6
    2
    NPN
    Dual
    300mW
    SWITCHING
    300MHz
    2 NPN (Dual) Matched Pair
    160V
    200mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    100MHz
    200mV
    160V
    180V
    6V
    1.1mm
    3mm
    1.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMMT5401-7-F
    19 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    29.993795mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Other Transistors
    300mW
    GULL WING
    260
    300MHz
    40
    DMMT5401
    6
    2
    PNP
    Dual
    300mW
    SWITCHING
    300MHz
    2 PNP (Dual) Matched Pair
    150V
    200mA
    60 @ 10mA 5V
    50nA ICBO
    500mV @ 5mA, 50mA
    150V
    100MHz
    -500mV
    150V
    160V
    5V
    450μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Tin
    1%
    56.2kOhm
    50V
    100mW
    -150V
    -200mA
    1608
    0603
    60
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMMT3904W-7-F
    15 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    6.010099mg
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Other Transistors
    200mW
    GULL WING
    260
    300MHz
    40
    DMMT3904
    6
    2
    NPN
    Dual
    200mW
    -
    300MHz
    2 NPN (Dual) Matched Pair
    40V
    200mA
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    60V
    6V
    1.1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Tin
    -
    -
    -
    -
    40V
    200mA
    -
    -
    30
    Lead Free
    150°C
    200mA
    70ns
    -
    -
    -
  • DMMT2907A-7
    6 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    -
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2013
    e3
    yes
    Discontinued
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1.28W
    GULL WING
    260
    -
    40
    DMMT2907
    6
    2
    PNP
    Dual
    -
    SWITCHING
    307MHz
    2 PNP (Dual)
    1.6V
    600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    60V
    307MHz
    -
    60V
    -60V
    -5V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -600mA
    21ns
    HIGH RELIABILITY
    900mW
    200ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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