Diodes Incorporated DMJT9435-13

Name: DMJT9435-13
Brand: Diodes Incorporated
SKU: 3585300-DMJT9435-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMJT9435-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3585300-DMJT9435-13

Description:: TRANS PNP 30V 3A SOT-223

ECAD Model:

Datasheet:: DMJT9435-13

Specifications

Diodes Incorporated DMJT9435-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMJT9435-13.

Factory Lead Time
24 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
160MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
160MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 800mA 1V
Vce Saturation (Max) @ Ib, Ic
550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
-550mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6V
Height
1.6mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMJT9435-13 Overview
In this device, the DC current gain is 125 @ 800mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -550mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

DMJT9435-13 Features
the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz

DMJT9435-13 Applications
There are a lot of Diodes Incorporated
DMJT9435-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DMJT9435-13 More Descriptions

DMJT9435 Series 30 V 3 A Low VCE(SAT) PNP Surface Mount Transistor - SOT-223
Trans GP BJT PNP 30V 3A 2000mW 4-Pin(3 Tab) SOT-223 T/R
TRANSISTOR, PNP, SOT223, 1.2W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:160MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:125; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Collector Emitter Voltage Vces:210mV; Current Ic Continuous a Max:800mA; Gain Bandwidth ft Typ:160MHz; Hfe Min:125; Operating Temperature Range:-55°C to 150°C; Package / Case:SOT-223; Termination Type:SMD; Transistor Type:Low Saturation (BISS)

Certification