Diodes Incorporated DMHC3025LSD-13

Name: DMHC3025LSD-13
Brand: Diodes Incorporated
SKU: 3585752-DMHC3025LSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMHC3025LSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3585752-DMHC3025LSD-13

Description:: MOSFET 2N/2P-CH 30V 8SO

ECAD Model:

Datasheet:: DMHC3025LSD-13

Specifications

Diodes Incorporated DMHC3025LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMHC3025LSD-13.

Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMHC3025LSD
Reference Standard
AEC-Q101
Number of Elements
4
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
7.5 ns
FET Type
2 N and 2 P-Channel (H-Bridge)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
590pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6A 4.2A
Gate Charge (Qg) (Max) @ Vgs
11.7nC @ 10V
Rise Time
4.9ns
Drain to Source Voltage (Vdss)
30V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
13.5 ns
Turn-Off Delay Time
28.2 ns
Continuous Drain Current (ID)
4.2A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6A
Drain-source On Resistance-Max
0.025Ohm
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
60A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
1.7mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMHC3025LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMHC3025LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMHC3025LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMHC3025LSD-13 More Descriptions

Dual N/P Channel 30 V 25 mO 11.7 nC H-Bridge Power Mosfet - SOIC-8
30V Enhancement MOSFET H-Bridge SOIC8 | Diodes Inc DMHC3025LSD-13
Trans MOSFET N/P-CH 30V 6A/4.2A Automotive 8-Pin SO T/R
MOSFET, AEC-Q101, DUAL N-CH & P-CH, 30V; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.025ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Certification