Cypress Semiconductor Corp CY14V101LA-BA25XI

Name: CY14V101LA-BA25XI
Brand: Cypress Semiconductor Corp
SKU: 3234383-CY14V101LA-BA25XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14V101LA-BA25XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3234383-CY14V101LA-BA25XI

Description:: IC NVSRAM 1MBIT 25NS 48FBGA

ECAD Model:

Datasheet:: CY14V101LA-BA25XI

Specifications

Cypress Semiconductor Corp CY14V101LA-BA25XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14V101LA-BA25XI.

Factory Lead Time
16 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2009
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3.3V
Terminal Pitch
0.75mm
Reflow Temperature-Max (s)
30
Base Part Number
CY14V101
Pin Count
48
Operating Supply Voltage
3.3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
3V
Memory Size
1Mb 128K x 8
Nominal Supply Current
70mA
Memory Type
Non-Volatile
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
128KX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Density
1 Mb
Standby Current-Max
0.008A
Access Time (Max)
25 ns
Word Size
8b
Height Seated (Max)
1.2mm
Length
10mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

CY14V101LA-BA25XI Overview
The manufacturer of this component is Cypress Semiconductor Corp, and it is classified as a Memory chip within the Memory category. It is designed to be mounted on a surface and comes in a 48-TFBGA package. The packaging method for this chip is a tray, and the terminal finish is composed of a mixture of tin, silver, and copper (Sn/Ag/Cu). It falls under the HTS code 8542.32.00.41, which is used for integrated circuits. The operating supply voltage for this chip is 3.3V, with a minimum supply voltage of 3V. It is a non-volatile memory type, meaning it retains data even when power is turned off. The length of this chip is 10mm, and it is not designed to be radiation hardened.

CY14V101LA-BA25XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3.3V

CY14V101LA-BA25XI Applications
There are a lot of Cypress Semiconductor Corp CY14V101LA-BA25XI Memory applications.

data buffer
multimedia computers
graphics card
networking
Cache memory
mainframes
printers
Camcorders
main computer memory
cell phones

CY14V101LA-BA25XI More Descriptions

CY14V101LA Series 1 Mb (128 K x 8) 25 ns SMT Nonvolatile Static RAM - FBGA-48
Non Volatile Srams/Tray |Cypress Infineon Technologies CY14V101LA-BA25XI
NVRAM NVSRAM Parallel 1Mbit 3.3V 48-Pin FBGA Tray
IC NVSRAM 1MBIT PARALLEL 48FBGA
NVRAM 1Mb 25ns 128K x 8 nvSRAM

Product Comparison

The three parts on the right have similar specifications to CY14V101LA-BA25XI.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Mode

Surface Mount

JESD-30 Code

Memory Density

Width

Power Supplies

Supply Current-Max

View Compare
CY14V101LA-BA25XI

Cypress Semiconductor Corp

16 Weeks

Copper, Silver, Tin

Surface Mount

Surface Mount

48-TFBGA

48

-40°C~85°C TA

Tray

2009

e1

Active

3 (168 Hours)

48

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3.3V

0.75mm

30

CY14V101

48

3.3V

3.6V

3V

1Mb 128K x 8

70mA

Non-Volatile

NVSRAM

Parallel

8b

128KX8

8

25ns

1 Mb

0.008A

25 ns

8b

1.2mm

10mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
CY14B101L-SP35XI

Cypress Semiconductor Corp

-

-

Surface Mount

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

48

-40°C~85°C TA

Tube

2009

e4

Obsolete

3 (168 Hours)

48

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

260

1

3V

0.635mm

-

CY14B101

48

3.3V

3.6V

2.7V

1Mb 128K x 8

60mA

Non-Volatile

NVSRAM

Parallel

8b

128KX8

8

35ns

1 Mb

0.003A

35 ns

8b

2.794mm

15.875mm

-

ROHS3 Compliant

Lead Free

unknown

20

Not Qualified

ASYNCHRONOUS

-

-

-

-

-

-

CY14V101LA-BA25XI vs CY14B101L-SP35XI
CY14B116N-BA25XI

Cypress Semiconductor Corp

26 Weeks

-

-

Surface Mount

60-LFBGA

-

-40°C~85°C TA

Tray

-

-

Active

3 (168 Hours)

60

3A991.A.2

-

8542.90.00.00

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

-

-

-

-

3.6V

2.7V

16Mb 1M x 16

-

Non-Volatile

NVSRAM

Parallel

-

1MX16

16

25ns

-

-

25 ns

-

1.2mm

18mm

-

ROHS3 Compliant

-

-

NOT SPECIFIED

-

ASYNCHRONOUS

YES

R-PBGA-B60

16777216 bit

10mm

-

-

CY14V101LA-BA25XI vs CY14B116N-BA25XI
CY14B104NA-BA25IT

Cypress Semiconductor Corp

11 Weeks

-

-

Surface Mount

48-TFBGA

-

-40°C~85°C TA

Tape & Reel (TR)

2011

e1

Last Time Buy

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

-

CY14B104

-

-

3.6V

2.7V

4Mb 256K x 16

-

Non-Volatile

NVSRAM

Parallel

-

256KX16

16

25ns

-

0.005A

25 ns

-

1.2mm

10mm

-

Non-RoHS Compliant

-

-

30

Not Qualified

ASYNCHRONOUS

YES

R-PBGA-B48

4194304 bit

6mm

3/3.3V

0.07mA

CY14V101LA-BA25XI vs CY14B104NA-BA25IT