Home > Products > Integrated Circuits (ICs) > Memory > CY14U256LA-BA35XI
CY14U256LA-BA35XI

Cypress Semiconductor Corp CY14U256LA-BA35XI

Part Number:
CY14U256LA-BA35XI
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3235301-CY14U256LA-BA35XI
Description:
IC NVSRAM 256KBIT 35NS 48FBGA
ECAD Model:
Datasheet:
CY14U256LA-BA35XI

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Cypress Semiconductor Corp CY14U256LA-BA35XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14U256LA-BA35XI.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Copper, Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFBGA
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    3A991.B.2.A
  • HTS Code
    8542.32.00.41
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.75mm
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Supply Voltage
    3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    256Kb 32K x 8
  • Nominal Supply Current
    60mA
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Memory Format
    NVSRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    32KX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    35ns
  • Density
    256 kb
  • Access Time (Max)
    35 ns
  • Word Size
    8b
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • RoHS Status
    ROHS3 Compliant
Description
CY14U256LA-BA35XI Overview
The operating temperature of this device is -40°C to 85°C, making it suitable for a wide range of environments. Its terminal position is at the bottom, and the terminal pitch is 0.75mm, allowing for easy integration into various systems. The maximum supply voltage is 3.6V, ensuring stable and efficient operation. With a nominal supply current of 60mA, this device is designed to be energy-efficient. It also boasts a non-volatile memory type, ensuring that data is retained even in the event of a power loss. In asynchronous operating mode, this device has a density of 256 kb and a word size of 8b, with a compact length of 10mm.

CY14U256LA-BA35XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14U256LA-BA35XI Applications
There are a lot of Cypress Semiconductor Corp CY14U256LA-BA35XI Memory applications.

hard disk drive (HDD)
supercomputers
multimedia computers
mainframes
eDRAM
personal digital assistants
cell phones
graphics card
telecommunications
eSRAM
CY14U256LA-BA35XI More Descriptions
NVRAM NVSRAM Parallel 256K-Bit 3V/3.3V 48-Pin FBGA Tray
3A991.B.2.A Surface Mount Tray 32KX8 ic memory 35ns 10mm 60mA 256kb
Nonvolatile SRAM, 256 Kb Density, BGA-48, RoHSCypress Semiconductor SCT
IC NVSRAM 256K PARALLEL 48FBGA
6116 - STATIC RAM 16K (2K X 8-BI
Product Comparison
The three parts on the right have similar specifications to CY14U256LA-BA35XI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Operating Mode
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Density
    Access Time (Max)
    Word Size
    Height Seated (Max)
    Length
    RoHS Status
    Surface Mount
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Memory Density
    Width
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Reach Compliance Code
    Pin Count
    Qualification Status
    Supplier Device Package
    Access Time
    View Compare
  • CY14U256LA-BA35XI
    CY14U256LA-BA35XI
    Cypress Semiconductor Corp
    16 Weeks
    Copper, Silver, Tin
    Surface Mount
    Surface Mount
    48-TFBGA
    48
    -40°C~85°C TA
    Tray
    2009
    Active
    3 (168 Hours)
    48
    3A991.B.2.A
    8542.32.00.41
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    NOT SPECIFIED
    3V
    3.6V
    2.7V
    256Kb 32K x 8
    60mA
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    8b
    32KX8
    8
    35ns
    256 kb
    35 ns
    8b
    1.2mm
    10mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CY14B116N-BA25XI
    CY14B116N-BA25XI
    Cypress Semiconductor Corp
    26 Weeks
    -
    -
    Surface Mount
    60-LFBGA
    -
    -40°C~85°C TA
    Tray
    -
    Active
    3 (168 Hours)
    60
    3A991.A.2
    8542.90.00.00
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    BOTTOM
    NOT SPECIFIED
    1
    3V
    0.75mm
    -
    -
    3.6V
    2.7V
    16Mb 1M x 16
    -
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    -
    1MX16
    16
    25ns
    -
    25 ns
    -
    1.2mm
    18mm
    ROHS3 Compliant
    YES
    NOT SPECIFIED
    R-PBGA-B60
    16777216 bit
    10mm
    -
    -
    -
    -
    -
    -
    -
    -
    CY14U256LA-BA35XI vs CY14B116N-BA25XI
  • CY14B104L-ZS25XI
    CY14B104L-ZS25XI
    ON Semiconductor
    -
    -
    -
    Surface Mount
    44-TSOP (0.400, 10.16mm Width)
    -
    -40°C~85°C TA
    Tube
    -
    Obsolete
    3 (168 Hours)
    44
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.8mm
    -
    -
    3.6V
    2.7V
    4Mb 512K x 8
    -
    Non-Volatile
    ASYNCHRONOUS
    NVSRAM
    Parallel
    -
    512KX8
    8
    25ns
    -
    25 ns
    -
    1.194mm
    18.415mm
    ROHS3 Compliant
    YES
    NOT SPECIFIED
    R-PDSO-G44
    4194304 bit
    10.16mm
    e4
    yes
    NICKEL PALLADIUM GOLD
    unknown
    44
    COMMERCIAL
    -
    -
    CY14U256LA-BA35XI vs CY14B104L-ZS25XI
  • CY14B104L-BA45XC
    CY14B104L-BA45XC
    ON Semiconductor
    -
    -
    -
    Surface Mount
    48-TFBGA
    -
    0°C~70°C TA
    Tube
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    NVSRAM (Non-Volatile SRAM)
    2.7V~3.6V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4Mb 512K x 8
    -
    Non-Volatile
    -
    NVSRAM
    Parallel
    -
    -
    -
    45ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    48-FBGA (6x10)
    45ns
    CY14U256LA-BA35XI vs CY14B104L-BA45XC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for CY14U256LA-BA35XI
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.