Cypress Semiconductor Corp CY14E101J2-SXI
- Part Number:
- CY14E101J2-SXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3718542-CY14E101J2-SXI
- Description:
- IC NVSRAM 1MBIT 3.4MHZ 8SOIC
- Datasheet:
- CY14E101J2-SXI
Cypress Semiconductor Corp CY14E101J2-SXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14E101J2-SXI.
- Factory Lead Time6 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-40°C~85°C TA
- PackagingTube
- Published2008
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- SubcategorySRAMs
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage5V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14E101
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Operating Supply Voltage5V
- Power Supplies5V
- Interface2-Wire, I2C, Serial
- Memory Size1Mb 128K x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency3.4MHz
- Supply Current-Max0.003mA
- Memory FormatNVSRAM
- Memory InterfaceI2C
- Data Bus Width8b
- Organization128KX8
- Memory Width8
- Density8 Mb
- Standby Current-Max0.00015A
- Height Seated (Max)1.727mm
- Length4.889mm
- RoHS StatusROHS3 Compliant
CY14E101J2-SXI Overview
This product is currently in Active status and has 8 terminations. It falls under the ECCN Code 3A991.B.2.A, indicating its eligibility for export under the Export Administration Regulations (EAR). The peak reflow temperature for this product is 260 degrees Celsius. It operates at a supply voltage of 5V and has a pin count of 8. The power supplies for this product are also 5V. With a memory size of 1Mb (128K x 8), this product is capable of storing large amounts of data. It has a clock frequency of 3.4MHz and is organized as 128Kx8. These specifications make this product suitable for a wide range of applications.
CY14E101J2-SXI Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
Operating Supply Voltage:5V
CY14E101J2-SXI Applications
There are a lot of Cypress Semiconductor Corp CY14E101J2-SXI Memory applications.
main computer memory
hard disk drive (HDD)
data buffer
nonvolatile BIOS memory
eSRAM
telecommunications
personal computers
supercomputers
networks
servers
This product is currently in Active status and has 8 terminations. It falls under the ECCN Code 3A991.B.2.A, indicating its eligibility for export under the Export Administration Regulations (EAR). The peak reflow temperature for this product is 260 degrees Celsius. It operates at a supply voltage of 5V and has a pin count of 8. The power supplies for this product are also 5V. With a memory size of 1Mb (128K x 8), this product is capable of storing large amounts of data. It has a clock frequency of 3.4MHz and is organized as 128Kx8. These specifications make this product suitable for a wide range of applications.
CY14E101J2-SXI Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
Operating Supply Voltage:5V
CY14E101J2-SXI Applications
There are a lot of Cypress Semiconductor Corp CY14E101J2-SXI Memory applications.
main computer memory
hard disk drive (HDD)
data buffer
nonvolatile BIOS memory
eSRAM
telecommunications
personal computers
supercomputers
networks
servers
CY14E101J2-SXI More Descriptions
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 8-SOIC
Non Volatile Srams/Tube |Cypress Infineon Technologies CY14E101J2-SXI
NVRAM NVSRAM Serial-I2C 1M-Bit 5V 8-Pin SOIC Tube
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Non-Volatile SRAM, 128KX8, CMOS, PDSO8
Non Volatile Srams/Tube |Cypress Infineon Technologies CY14E101J2-SXI
NVRAM NVSRAM Serial-I2C 1M-Bit 5V 8-Pin SOIC Tube
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Non-Volatile SRAM, 128KX8, CMOS, PDSO8
The three parts on the right have similar specifications to CY14E101J2-SXI.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Supply VoltagePower SuppliesInterfaceMemory SizeMemory TypeOperating ModeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthDensityStandby Current-MaxHeight Seated (Max)LengthRoHS StatusSurface MountTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Write Cycle Time - Word, PageMemory DensityAccess Time (Max)WidthReach Compliance CodeTerminal FinishView Compare
-
CY14E101J2-SXI6 WeeksGoldSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-40°C~85°C TATube2008e4yesActive3 (168 Hours)83A991.B.2.A8542.32.00.41SRAMsNVSRAM (Non-Volatile SRAM)4.5V~5.5VDUAL26015V1.27mm30CY14E1018R-PDSO-G8Not Qualified5V5V2-Wire, I2C, Serial1Mb 128K x 8Non-VolatileSYNCHRONOUS3.4MHz0.003mANVSRAMI2C8b128KX888 Mb0.00015A1.727mm4.889mmROHS3 Compliant-----------
-
26 Weeks--Surface Mount60-LFBGA-40°C~85°C TATray---Active3 (168 Hours)603A991.A.28542.90.00.00-NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mm---R-PBGA-B60----16Mb 1M x 16Non-VolatileASYNCHRONOUS--NVSRAMParallel-1MX1616--1.2mm18mmROHS3 CompliantYESNOT SPECIFIED3.6V2.7V25ns16777216 bit25 ns10mm--
-
---Surface Mount44-TSOP (0.400, 10.16mm Width)-40°C~85°C TATube---Obsolete3 (168 Hours)44---NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL-13V0.8mm--44R-PDSO-G44COMMERCIAL---4Mb 512K x 8Non-VolatileASYNCHRONOUS--NVSRAMParallel-512KX88--1.194mm18.415mmROHS3 CompliantYES-3.6V2.7V45ns4194304 bit45 ns10.16mmunknown-
-
---Surface Mount44-TSOP (0.400, 10.16mm Width)-40°C~85°C TATube-e4yesObsolete3 (168 Hours)44---NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.8mm--44R-PDSO-G44COMMERCIAL---4Mb 512K x 8Non-VolatileASYNCHRONOUS--NVSRAMParallel-512KX88--1.194mm18.415mmROHS3 CompliantYESNOT SPECIFIED3.6V2.7V25ns4194304 bit25 ns10.16mmunknownNICKEL PALLADIUM GOLD
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
29 March 2024
STM32H743VIT6 Specifications, Characteristics, Pinout and Market Situation
Ⅰ. Description of STM32H743VIT6Ⅱ. Specifications of STM32H743VIT6Ⅲ. Characteristics of STM32H743VIT6Ⅳ. How to use STM32H743VIT6?Ⅴ. STM32H743VIT6 pinoutⅥ. Low-power strategy of STM32H743VIT6Ⅶ. Market situation of STM32H743VIT6Ⅰ. Description of STM32H743VIT6The STM32H743VIT6... -
01 April 2024
XCF32PFSG48C Symbol, Manufacturer, Specifications and Programming
Ⅰ. Overview of XCF32PFSG48CⅡ. Symbol, footprint and 3D model of XCF32PFSG48CⅢ. Manufacturer of XCF32PFSG48CⅣ. Reset and power-on reset activationⅤ. Specifications of XCF32PFSG48CⅥ. Programming of XCF32PFSG48CⅦ. In which emerging... -
01 April 2024
M24C16-RMN6TP Structure, Advantages, Package and Other Details
Ⅰ. M24C16-RMN6TP descriptionⅡ. Basic structure and working principle of M24C16-RMN6TPⅢ. Technical parameters of M24C16-RMN6TPⅣ. What are the market competitive advantages of M24C16-RMN6TP?Ⅴ. Package of M24C16-RMN6TPⅥ. Data transmission process... -
02 April 2024
TPS54202DDCR Alternatives, Characteristics, Layout and TPS54202DDCR vs TPS54202DDCT
Ⅰ. What is TPS54202DDCR?Ⅱ. Functional modes of TPS54202DDCRⅢ. Characteristics of TPS54202DDCRⅣ. How to reduce the noise of TPS54202DDCR?Ⅴ. Comparison between TPS54202DDCR and TPS54202DDCTⅥ. Layout of TPS54202DDCRⅦ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.