Cypress Semiconductor Corp CY14B108N-BA25XI

Name: CY14B108N-BA25XI
Brand: Cypress Semiconductor Corp
SKU: 3229837-CY14B108N-BA25XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14B108N-BA25XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3229837-CY14B108N-BA25XI

Description:: IC NVSRAM 8MBIT 25NS 48FBGA

ECAD Model:

Datasheet:: CY14B108N-BA25XI

Specifications

Cypress Semiconductor Corp CY14B108N-BA25XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B108N-BA25XI.

Factory Lead Time
12 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.2.A
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.75mm
Reflow Temperature-Max (s)
30
Base Part Number
CY14B108
Pin Count
48
Operating Supply Voltage
3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Mb 512K x 16
Nominal Supply Current
75mA
Memory Type
Non-Volatile
Logic Function
Clock
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
16b
Organization
512KX16
Memory Width
16
Write Cycle Time - Word, Page
25ns
Density
8 Mb
Standby Current-Max
0.01A
Access Time (Max)
25 ns
Word Size
16b
Time Format
HH:MM:SS
Height Seated (Max)
1.2mm
Length
10mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

CY14B108N-BA25XI Overview
The device has a total of 48 pins and is marked with a Pbfree code, indicating that it is free of lead. It also has 48 terminations, spaced at a pitch of 0.75mm. The voltage supply range for this device is between 2.7V to 3.6V, with an operating supply voltage of 3V. It has a parallel memory interface and a data bus width of 16 bits. The organization of the memory is 512KX16, meaning it has a capacity of 512 kilobytes with a word size of 16 bits. Additionally, the time format for this device is in HH:MM:SS, providing a precise and accurate time display. These specifications make this device a highly efficient and reliable choice for various applications.

CY14B108N-BA25XI Features
Package / Case: 48-TFBGA
48 Pins
Operating Supply Voltage:3V

CY14B108N-BA25XI Applications
There are a lot of Cypress Semiconductor Corp CY14B108N-BA25XI Memory applications.

embedded logic
networking
servers
printers
mainframes
main computer memory
cell phones
multimedia computers
hard disk drive (HDD)
Cache memory

CY14B108N-BA25XI More Descriptions

CY14B108N Series 8 M (512 K x 16) 3.6 V 25 ns Surface Mount nvSRAM - FBGA-48
IC NVSRAM 8MBIT PARALLEL 48FBGA
NVRAM NVSRAM Parallel 8M-Bit 3V 48-Pin FBGA
CY14B108N - NON-VOLATILE SRAM, 5
NVRAM 8Mb 3V 25ns 512K x 16 nvSRAM
NV SRAM, 512K X 16BIT, 25NS, FBGA-48; Memory Size:8Mbit; Memory Organisation:512K x 16bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48Pins; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)

Product Comparison

The three parts on the right have similar specifications to CY14B108N-BA25XI.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Logic Function

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Time Format

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Mode

Supplier Device Package

Access Time

Surface Mount

JESD-30 Code

Memory Density

Width

View Compare
CY14B108N-BA25XI

Cypress Semiconductor Corp

12 Weeks

Copper, Silver, Tin

Surface Mount

Surface Mount

48-TFBGA

48

-40°C~85°C TA

Tray

2007

e1

yes

Active

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

30

CY14B108

48

3V

3.6V

2.7V

8Mb 512K x 16

75mA

Non-Volatile

Clock

NVSRAM

Parallel

16b

512KX16

16

25ns

8 Mb

0.01A

25 ns

16b

HH:MM:SS

1.2mm

10mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
CY14B101L-SP35XI

Cypress Semiconductor Corp

-

-

Surface Mount

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

48

-40°C~85°C TA

Tube

2009

e4

-

Obsolete

3 (168 Hours)

48

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

260

1

3V

0.635mm

-

CY14B101

48

3.3V

3.6V

2.7V

1Mb 128K x 8

60mA

Non-Volatile

-

NVSRAM

Parallel

8b

128KX8

8

35ns

1 Mb

0.003A

35 ns

8b

-

2.794mm

15.875mm

-

ROHS3 Compliant

Lead Free

unknown

20

Not Qualified

ASYNCHRONOUS

-

-

-

-

-

-

CY14B108N-BA25XI vs CY14B101L-SP35XI
CY14B101L-SP45XC

ON Semiconductor

-

-

-

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

-

0°C~70°C TA

Tube

-

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

-

-

-

-

-

-

-

-

-

-

-

1Mb 128K x 8

-

Non-Volatile

-

NVSRAM

Parallel

-

-

-

45ns

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

48-SSOP

45ns

-

-

-

-

CY14B108N-BA25XI vs CY14B101L-SP45XC
CY14B104L-ZS25XI

ON Semiconductor

-

-

-

Surface Mount

44-TSOP (0.400, 10.16mm Width)

-

-40°C~85°C TA

Tube

-

e4

yes

Obsolete

3 (168 Hours)

44

-

NICKEL PALLADIUM GOLD

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

260

1

3V

0.8mm

-

-

44

-

3.6V

2.7V

4Mb 512K x 8

-

Non-Volatile

-

NVSRAM

Parallel

-

512KX8

8

25ns

-

-

25 ns

-

-

1.194mm

18.415mm

-

ROHS3 Compliant

-

unknown

NOT SPECIFIED

COMMERCIAL

ASYNCHRONOUS

-

-

YES

R-PDSO-G44

4194304 bit

10.16mm

CY14B108N-BA25XI vs CY14B104L-ZS25XI