Cypress Semiconductor Corp CY14B101LA-SP45XI
- Part Number:
- CY14B101LA-SP45XI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3227456-CY14B101LA-SP45XI
- Description:
- IC NVSRAM 1MBIT 45NS 48SSOP
- Datasheet:
- CY14B101LA-SP45XI
Cypress Semiconductor Corp CY14B101LA-SP45XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B101LA-SP45XI.
- Factory Lead Time13 Weeks
- Contact PlatingGold, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case48-BSSOP (0.295, 7.50mm Width)
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTube
- Published2009
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- HTS Code8542.32.00.41
- SubcategorySRAMs
- Max Power Dissipation1W
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.635mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY14B101
- Pin Count48
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Mb 128K x 8
- Nominal Supply Current52mA
- Memory TypeNon-Volatile
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization128KX8
- Memory Width8
- Write Cycle Time - Word, Page45ns
- Density1 Mb
- Standby Current-Max0.005A
- Access Time (Max)45 ns
- Word Size8b
- Height Seated (Max)2.794mm
- Length15.875mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CY14B101LA-SP45XI Overview
The Moisture Sensitivity Level (MSL) for this particular product is 3 (168 Hours), indicating that it can withstand exposure to moisture for up to 168 hours. Its HTS Code is 8542.32.00.41, which classifies it as a semiconductor device. With a maximum power dissipation of 1W, this device is designed to efficiently handle high levels of power. It has 1 function and operates at a supply voltage of 3V. The Memory Type is Non-Volatile, meaning that it retains data even when power is turned off. Its Memory Format is NVSRAM, which stands for Non-Volatile Static Random Access Memory. This device has a Parallel Memory Interface and a maximum access time of 45 ns. Its length measures 15.875mm, making it compact and easily integrated into various electronic systems.
CY14B101LA-SP45XI Features
Package / Case: 48-BSSOP (0.295, 7.50mm Width)
48 Pins
Operating Supply Voltage:3V
CY14B101LA-SP45XI Applications
There are a lot of Cypress Semiconductor Corp CY14B101LA-SP45XI Memory applications.
Cache memory
telecommunications
networks
eSRAM
nonvolatile BIOS memory
personal digital assistants
embedded logic
data buffer
workstations,
supercomputers
The Moisture Sensitivity Level (MSL) for this particular product is 3 (168 Hours), indicating that it can withstand exposure to moisture for up to 168 hours. Its HTS Code is 8542.32.00.41, which classifies it as a semiconductor device. With a maximum power dissipation of 1W, this device is designed to efficiently handle high levels of power. It has 1 function and operates at a supply voltage of 3V. The Memory Type is Non-Volatile, meaning that it retains data even when power is turned off. Its Memory Format is NVSRAM, which stands for Non-Volatile Static Random Access Memory. This device has a Parallel Memory Interface and a maximum access time of 45 ns. Its length measures 15.875mm, making it compact and easily integrated into various electronic systems.
CY14B101LA-SP45XI Features
Package / Case: 48-BSSOP (0.295, 7.50mm Width)
48 Pins
Operating Supply Voltage:3V
CY14B101LA-SP45XI Applications
There are a lot of Cypress Semiconductor Corp CY14B101LA-SP45XI Memory applications.
Cache memory
telecommunications
networks
eSRAM
nonvolatile BIOS memory
personal digital assistants
embedded logic
data buffer
workstations,
supercomputers
CY14B101LA-SP45XI More Descriptions
CY14B101LA Series 1 Mb (128 K x 8) Surface Mount nvSRAM - SSOP-48
NVRAM NVSRAM Parallel 1M-Bit 3V 48-Pin SSOP Tube
IC NVSRAM 1MBIT PARALLEL 48SSOP
NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
SRAM, 1MBIT, 45NS, SSOP-48; Memory Type:SRAM; Memory Size:1Mbit; NVRAM Memory Configuration:128K x 8bit; IC Interface Type:Parallel; Access Time:45ns; Memory Case Style:SSOP; No. of Pins:48Pins; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)
NVRAM NVSRAM Parallel 1M-Bit 3V 48-Pin SSOP Tube
IC NVSRAM 1MBIT PARALLEL 48SSOP
NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
SRAM, 1MBIT, 45NS, SSOP-48; Memory Type:SRAM; Memory Size:1Mbit; NVRAM Memory Configuration:128K x 8bit; IC Interface Type:Parallel; Access Time:45ns; Memory Case Style:SSOP; No. of Pins:48Pins; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)
The three parts on the right have similar specifications to CY14B101LA-SP45XI.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxAccess Time (Max)Word SizeHeight Seated (Max)LengthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeMemory DensityWidthSupplier Device PackageAccess TimeQualification StatusPower SuppliesSupply Current-MaxView Compare
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CY14B101LA-SP45XI13 WeeksGold, TinSurface MountSurface Mount48-BSSOP (0.295, 7.50mm Width)48-40°C~85°C TATube2009e4yesActive3 (168 Hours)48EAR99Nickel/Palladium/Gold (Ni/Pd/Au)8542.32.00.41SRAMs1WNVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.635mm30CY14B101483V3.6V2.7V1Mb 128K x 852mANon-VolatileNVSRAMParallel8b128KX8845ns1 Mb0.005A45 ns8b2.794mm15.875mmNoNo SVHCROHS3 CompliantLead Free------------
-
26 Weeks--Surface Mount60-LFBGA--40°C~85°C TATape & Reel (TR)---Active3 (168 Hours)603A991.A.2-8542.90.00.00--NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mm----3.6V2.7V16Mb 1M x 16-Non-VolatileNVSRAMParallel-1MX161625ns--25 ns-1.2mm18mm--ROHS3 Compliant-YESNOT SPECIFIEDR-PBGA-B60ASYNCHRONOUS16777216 bit10mm-----
-
---Surface Mount48-BSSOP (0.295, 7.50mm Width)-0°C~70°C TATube---Obsolete3 (168 Hours)------NVSRAM (Non-Volatile SRAM)2.7V~3.6V-----------1Mb 128K x 8-Non-VolatileNVSRAMParallel---45ns--------ROHS3 Compliant-------48-SSOP45ns---
-
11 Weeks--Surface Mount48-TFBGA--40°C~85°C TATape & Reel (TR)2011e1-Last Time Buy3 (168 Hours)483A991.B.2.ATin/Silver/Copper (Sn/Ag/Cu)8542.32.00.41SRAMs-NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOM26013V0.75mm-CY14B104--3.6V2.7V4Mb 256K x 16-Non-VolatileNVSRAMParallel-256KX161625ns-0.005A25 ns-1.2mm10mm--Non-RoHS Compliant-YES30R-PBGA-B48ASYNCHRONOUS4194304 bit6mm--Not Qualified3/3.3V0.07mA
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