BUX10

STMicroelectronics BUX10

Part Number:
BUX10
Manufacturer:
STMicroelectronics
Ventron No:
2846940-BUX10
Description:
TRANS NPN 125V 25A TO-3
ECAD Model:
Datasheet:
BUX10

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Specifications
STMicroelectronics BUX10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUX10.
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    TO-204AA, TO-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    200°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    125V
  • Max Power Dissipation
    150W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Current Rating
    25A
  • Frequency
    8MHz
  • Base Part Number
    BUX10
  • Pin Count
    2
  • JESD-30 Code
    O-MBFM-P2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    8MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    125V
  • Max Collector Current
    25A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 10A 2V
  • Current - Collector Cutoff (Max)
    1.5mA
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 2A, 20A
  • Collector Emitter Breakdown Voltage
    125V
  • Transition Frequency
    8MHz
  • Collector Emitter Saturation Voltage
    700mV
  • Collector Base Voltage (VCBO)
    160V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    20
  • Height
    8.7mm
  • Length
    39.5mm
  • Width
    26.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUX10 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.

BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz


BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUX10 More Descriptions
Transistor NPN Silicon 160V IC=25A TO-3 Case High Speed Switch For Linear ApplicationsNTE Electronics
TRANS NPN 125V 25A TO3
NPN 25A 125V TO-204
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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