STMicroelectronics BUX10
- Part Number:
- BUX10
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846940-BUX10
- Description:
- TRANS NPN 125V 25A TO-3
- Datasheet:
- BUX10
STMicroelectronics BUX10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUX10.
- MountChassis Mount, Through Hole
- Mounting TypeChassis Mount
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature200°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC125V
- Max Power Dissipation150W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Current Rating25A
- Frequency8MHz
- Base Part NumberBUX10
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product8MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)125V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10A 2V
- Current - Collector Cutoff (Max)1.5mA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 2A, 20A
- Collector Emitter Breakdown Voltage125V
- Transition Frequency8MHz
- Collector Emitter Saturation Voltage700mV
- Collector Base Voltage (VCBO)160V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- Height8.7mm
- Length39.5mm
- Width26.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUX10 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz
BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 2A, 20A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 25A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
BUX10 Features
the DC current gain for this device is 20 @ 10A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 25A
a transition frequency of 8MHz
BUX10 Applications
There are a lot of STMicroelectronics
BUX10 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUX10 More Descriptions
Transistor NPN Silicon 160V IC=25A TO-3 Case High Speed Switch For Linear ApplicationsNTE Electronics
TRANS NPN 125V 25A TO3
NPN 25A 125V TO-204
TRANS NPN 125V 25A TO3
NPN 25A 125V TO-204
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