STMicroelectronics BUV298AV

Name: BUV298AV
Brand: STMicroelectronics
SKU: 2468788-BUV298AV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUV298AV

Manufacturer:: STMicroelectronics

Ventron No:: 2468788-BUV298AV

Description:: TRANS NPN 450V 50A ISOTOP

ECAD Model:

Datasheet:: BUV298AV

Specifications

STMicroelectronics BUV298AV technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUV298AV.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel (Ni)
Subcategory
BIP General Purpose Power
Voltage - Rated DC
450V
Max Power Dissipation
250W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
50A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BUV298
Pin Count
3
JESD-30 Code
R-XUFM-X3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 32A 5V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 6.4A, 32A
Collector Emitter Breakdown Voltage
450V
Emitter Base Voltage (VEBO)
7V
hFE Min
12
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUV298AV Overview
In this device, the DC current gain is 12 @ 32A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 6.4A, 32A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.

BUV298AV Features
the DC current gain for this device is 12 @ 32A 5V
the vce saturation(Max) is 1.2V @ 6.4A, 32A
the emitter base voltage is kept at 7V
the current rating of this device is 50A

BUV298AV Applications
There are a lot of STMicroelectronics
BUV298AV applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BUV298AV More Descriptions

Power Bipolar Transistor, 60A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN Power Module LTB 9-2009
IC SUPERVISOR 10 CHANNEL 64VQFN
French Electronic Distributor since 1988

Certification