STMicroelectronics BULB49DT4

Name: BULB49DT4
Brand: STMicroelectronics
SKU: 3069104-BULB49DT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BULB49DT4

Manufacturer:: STMicroelectronics

Ventron No:: 3069104-BULB49DT4

Description:: TRANSISTOR HIGH VOLTAGE

ECAD Model:

Datasheet:: BULB49DT4

Specifications

STMicroelectronics BULB49DT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BULB49DT4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
80W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BULB49
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
4 @ 7A 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 800mA, 4A
Collector Emitter Breakdown Voltage
450V
Collector Base Voltage (VCBO)
850V
Emitter Base Voltage (VEBO)
10V
hFE Min
10
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BULB49DT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 4 @ 7A 10V.When VCE saturation is 1.2V @ 800mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.

BULB49DT4 Features
the DC current gain for this device is 4 @ 7A 10V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V

BULB49DT4 Applications
There are a lot of STMicroelectronics
BULB49DT4 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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Certification